2008 17th Biennial University/Government/Industry Micro/Nano Symposium 2008
DOI: 10.1109/ugim.2008.30
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Development of Ultra-Miniaturized Piezoresistive Pressure Sensors for Biomedical Applications

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Cited by 9 publications
(6 citation statements)
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“…The piezoresistive sensitivity is calculated by the coordinate transformation of piezoresistive coefficient to form P-type piezoresistors in (100) silicon. [13] The results illustrate that the transverse and longitudinal piezoresistive coefficients in P-type (100) silicon are -π 44 /2 and π 44 /2, respectively. Therefore, the design of piezoresistors are mainly determined by the position on the monocrystalline silicon sensitive diaphragm.…”
Section: Design Of Tiny Micro-pressure Sensormentioning
confidence: 88%
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“…The piezoresistive sensitivity is calculated by the coordinate transformation of piezoresistive coefficient to form P-type piezoresistors in (100) silicon. [13] The results illustrate that the transverse and longitudinal piezoresistive coefficients in P-type (100) silicon are -π 44 /2 and π 44 /2, respectively. Therefore, the design of piezoresistors are mainly determined by the position on the monocrystalline silicon sensitive diaphragm.…”
Section: Design Of Tiny Micro-pressure Sensormentioning
confidence: 88%
“…To verify the performance of the pressure sensor prepared in the present work, we have compared our test results with those in literature [13] and [16]. For this purpose, we ensure that the dimensions and ranges of the pressure sensors mentioned in the comparative references are as close as possible to the parameters of the sensors we have proposed.…”
Section: Test Of Overload Capacity Of the Micropressure Sensormentioning
confidence: 96%
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“…Combined with silicon fusion bonding, more complex three-dimensional structures could be produced. Doping ions were implanted into the device layer of SOI to form piezoresistors [72]. Then, the silicon handler of SOI was thinned to 150 μm, and a cavity with the vertical wall was etched by DRIE.…”
Section: Size Change With Process Developmentmentioning
confidence: 99%
“…For example, Kalvesten, E. et al [8] fabricated a thin-film pressure sensor by releasing thermal oxygen sacrificial layer in a cavity with a gap of 3 µm. Gowrishetty U. et al [9] proposed a miniature pressure sensor using silicon on insulator (SOI) and deep reactive ion etching (DRIE) technologies. The pressure sensor was thinned to 150 µm without back sealing bonding.…”
Section: Of 10mentioning
confidence: 99%