Ti-sheathed MgB 2 wires doped with nanosize crystalline-SiC up to a concentration of 15 wt% SiC have been fabricated, and the effects of the SiC doping on the critical current density (J c ) and other superconducting properties studied. In contrast with the previously reported results that nano-SiC doping with a doping range below 16 wt% usually enhances J c , particularly at higher fields, our measurements show that SiC doping decreases J c over almost the whole field range from 0 to 7.3 T at all temperatures. Furthermore, it is found that the degradation of J c becomes stronger at higher SiC doping levels, which is also in sharp contrast with the reported results that J c is usually optimized at doping levels near 10 wt% SiC. Our results indicate that these negative effects on J c could be attributed to the absence of significant effective pinning centres (mainly Mg 2 Si) due to the high chemical stability of the crystalline-SiC particles. and believed that these nano-inclusions function as effective J J J