Development of Silicon Carbide Atomic Layer Etching Technology

Lee, Kang-Il; Seok, Dong Chan; Jang, Soo Ouk; Choi, Young Sang

doi:10.1016/j.tsf.2020.138084

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…The breakdown voltage reaches above 53.1 kV for an implant dose of 3.0×10 13 cm -2 and the breakdown termination length efficiency is above 18 V/μm for a wide range of implant doses (i.e., doses from 1.0×10 13 to 3.0×10 13 cm -2 ). Simulations of a ESZ-JTE step height deviation of 1-10 nm per etch step, which is approximately a factor of 2.5-100 larger than etch processing margins (i.e., 0.1-0.4 nm [23], [24], [54]- [57]), results in a blocking voltage deviation of approximately 150-200 V, which indicates a relatively low sensitivity to height processing margins. With this in mind, the ESZ-JTE may be a suitable alternative to SM-JTE, and in addition, the ESZ-JTE structure may be further optimized in different ways.…”

Section: -50 Kv Class Sic Pin Diodes With Esz-jtementioning

confidence: 97%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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Section: -50 Kv Class Sic Pin Diodes With Esz-jtementioning

confidence: 97%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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“…According to a recent study, Lee et al employed SF 6 and H 2 to perform atomic layer etching of SiC. They were successful in attaining an etching rate of 0.4 Å/cycle at an RF power of 300 W [132]. Based on the preceding report, we summarize the etching parameters for germanium, carbon, GaN, and the other semiconductors indicated in Table 4 before moving on to the next section.…”

Section: Semiconductorsmentioning

confidence: 99%

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

Tsai

2022

Nanomaterials

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The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.

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“…Silicon carbide (SiC) has attracted the attention of many researchers due to its outstanding electrical, mechanical, and thermal properties. SiC has been used in many industries for power devices and optoelectronic applications [1][2][3][4][5][6][7][8]. There are more than 200 polytypes of Si-C, with cubically (3C-SiC) and hexagonally (4H-SiC or 6H-SiC) modified compounds being the most used.…”

Section: Introductionmentioning

confidence: 99%

“…There are more than 200 polytypes of Si-C, with cubically (3C-SiC) and hexagonally (4H-SiC or 6H-SiC) modified compounds being the most used. The differences come from the stacking sequence of the hexagonal structure bonded in the Si-C bilayers [1][2][3][4][5][6][7][8]. The existence of polytypes implies that many different stable atomic arrangements and symmetries can be obtained, including hexagonal, cubic, and rhombohedral arrangements [6,7].…”

Section: Introductionmentioning

confidence: 99%

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

2022

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The structural defect effect of impurities on silicon carbide (SiC) was studied to determine the luminescence properties with temperature-dependent photoluminescence (PL) measurements. Single 4H-SiC crystals were fabricated using three different 3C-SiC starting materials and the physical vapor transport method at a high temperature and 100 Pa in an argon atmosphere. The correlation between the impurity levels and the optical and fluorescent properties was confirmed using Raman spectroscopy, X-ray diffraction, inductively coupled plasma atomic emission spectroscopy (ICP-OES), UV-Vis-NIR spectrophotometry, and PL measurements. The PL intensity was observed in all three single 4H-SiC crystals, with the highest intensities at low temperatures. Two prominent PL emission peaks at 420 and 580 nm were observed at temperatures below 50 K. These emission peaks originated from the impurity concentration due to the incorporation of N, Al, and B in the single 4H-SiC crystals and were supported by ICP-OES. The emission peaks at 420 and 580 nm occurred due to donor–acceptor-pair recombination through the incorporated concentrations of nitrogen, boron, and aluminum in the single 4H-SiC crystals. The results of the present work provide evidence based on the low-temperature PL that the mechanism of PL emission in single 4H-SiC crystals is mainly related to the transitions due to defect concentration.

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Development of Silicon Carbide Atomic Layer Etching Technology

Cited by 6 publications

References 17 publications

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

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