Development of RAF Quality 150mm 4H-SiC Wafer

Kondo, Hiroyuki; Takaba, Hidetaka; Yamada, Masanori; Urakami, Yasushi; Okamoto, Takeshi; Kobayashi, Masakazu; Masuda, Takashi; Gunjishima, Itaru; Shigeto, Kunji; Ooya, Nobuyuki; Sugiyama, Naohiro; Matsuse, Akihiro; Kozawa, Takahiro; Sato, Takayuki; Hirose, Fusao; Yamauchi, S.; Onda, Shoichi

doi:10.4028/www.scientific.net/msf.778-780.17

Cited by 16 publications

(10 citation statements)

References 7 publications

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“…Widegap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have high critical electric field strength, which is attractive for high-voltage power devices [1][2][3]. In SiC, high-quality bulk crystals with a large diameter (~6 inch) can be obtained with sublimation method, and SiC homoepitaxial layers can be grown on SiC bulk crystals with chemical vapor deposition (CVD) [4,5]. Thus, a vertical structure is typically utilized for SiC power devices.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

Okuda

Hikihara

2018

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)

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In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency gate driver from the logic level, and robustness of SiC MOSFET with high avalanche capability is suitable for a valve transistor in power converters. Our proposed gate driver consists of digital isolators, complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT push-pull stage has a high driving capability owing to its superior switching characteristics, and complementary Si MOSFETs can enhance the control signal from the digital isolator. We investigated limiting factors of the switching frequency of the proposed gate driver by focusing on each circuit component and proposed an improved driving configuration for the gate driver. As a result, 20-MHz hard switching of a SiC MOSFET was achieved using the improved gate driver with GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

Okuda

Hikihara

2018

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)

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“…The SiC crystal has been considered as an ideal wide bandgap semiconductor material owing to its advantages in high frequency, high power, and high-temperature electronic field [1,2,3]. In terms of polytype structure, the 3C, 6H, 4H, and 15R structures are the most common ones from among over 250 polytypes.…”

Section: Introduction *mentioning

confidence: 99%

“…As H. J. Rost and E. Tymicki [4,5] have reported, suitable nitrogen doping can prevent the polytype formation during n-type 4H-SiC growth. However, the growth of high-purity semi-insulating SiC crystals requires a comparatively low nitrogen background concentration, which is normally less than 10 17 cm 3 . At present, the 4H polytype stabilization method in the high purity semi insulating SiC single crystal growth process  Corresponding author.…”

Section: Introduction *mentioning

confidence: 99%

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Mao¹,

Wang²,

Wei³

et al. 2016

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Because the conditions under which semi-insulating 4H-SiC crystals can grow are so specific, other polytypes such as 15R and 6H can easily emerge during the growth process. In this work, a polytype stabilization technology was developed by altering the following parameters: growth temperature, temperature field distribution, and C/Si ratio. In the growth process of high-purity semi-insulating 4H-SiC crystals, the generation of undesirable polytypes was prevented, and a crystal 100 % 4H-SiC polytype was obtained. A high C/Si ratio in powder source was shown to be advantageous for the stabilization of the 4H polytype. Several methods were applied to evaluate the quality of crystals precisely; these methods include Raman mapping, X-ray diffraction, and resistivity mapping. Results showed that the 3inch-wafer was entirely made of 4H polytype, the mean value of FWHM was approximately 40 arcsec, and the distribution of the resistivity value was between 10 6 Ωcm and 10 7 Ωcm.

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“…Besides a number of news announcements, so far only few scientific publications have been released on bulk growth of 150 mm 4H‐SiC (see e.g. ). The state‐of‐the‐art PVT method may be called mature.…”

Section: Introductionmentioning

confidence: 99%

Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping

Wellmann

Neubauer

Fahlbusch

et al. 2014

Crystal Research and Technology

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Silicon carbide single crystals have become widely used as substrates for power electronic devices like diodes and electronic switches. Today, 4inch and 6inch wafer diameters are commercially available which are processed from vapor grown crystals. The state of the art physical vapor transport method may be called mature. Nevertheless, low defect density and uniform doping are still topics which can be further improved by current research and development of more sophisticated processes and process control. The aim of the paper is to review the physical vapor transport growth method as applied today. Special emphasis will be put on currently less advanced in situ growth monitoring tools based on 2D and 3D X-ray imaging that could be a tool for production monitoring. These techniques allow a precise determination of the crystal and source material evolution. Another topic will be the processing of highly conductive p-type 4H-SiC which is of particular interest for power electronic switches

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Development of RAF Quality 150mm 4H-SiC Wafer

Cited by 16 publications

References 7 publications

Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping

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