2011
DOI: 10.1016/j.jnoncrysol.2011.01.003
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Development of porous silicon matrix and characteristics of porous silicon/tin oxide structures

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Cited by 3 publications
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“…The 50mA/cm 2 sample shows a broad peak indicating small and uniform grains all over the surface. Increasing the current density above 50mA/cm 2 the upper layer could have been etched away and the grain size value corresponds to grains of the next layer [17]. The grain size D of crystallites was calculated from the Scherer's formula,…”
Section: Figure1: X-ray Diffraction Pattern Of Porous Silicon For Varmentioning
confidence: 99%
“…The 50mA/cm 2 sample shows a broad peak indicating small and uniform grains all over the surface. Increasing the current density above 50mA/cm 2 the upper layer could have been etched away and the grain size value corresponds to grains of the next layer [17]. The grain size D of crystallites was calculated from the Scherer's formula,…”
Section: Figure1: X-ray Diffraction Pattern Of Porous Silicon For Varmentioning
confidence: 99%