2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)
DOI: 10.1109/ectc.2004.1319363
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Development of organic flip chip packaging technology for nanometer silicon incorporating copper metallization and low-k dielectric

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“…The silicon die incorporates low-k dielectric and copper interconnects. Substrate technology that meets I/O density, electrical and thermal performance requirements was developed [2]. The package uses a singlepiece copper stiffener/heat-spreader that is attached to the substrate using an epoxy adhesive.…”
Section: Introductionmentioning
confidence: 99%
“…The silicon die incorporates low-k dielectric and copper interconnects. Substrate technology that meets I/O density, electrical and thermal performance requirements was developed [2]. The package uses a singlepiece copper stiffener/heat-spreader that is attached to the substrate using an epoxy adhesive.…”
Section: Introductionmentioning
confidence: 99%