Development of ohmic contact materials for GaAs integrated circuits

Murakami, Masanori

doi:10.1016/s0920-2307(05)80006-4

Cited by 53 publications

(8 citation statements)

References 187 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition to a wide variety of device and circuit applications, good quality ohmic contacts are required for investigating the physical and electrical properties of bulk materials and related III-V heterostructures. Consequently, much attention has been recently devoted to the development of ohmic contacts to III-V materials, and the research area include both, the fundamental behavior of metal/semiconductor contacts and the new techniques for improving the properties of ohmic contacts [1][2][3][4][5][6][7].…”

Section: Criteria For a Good Ohmic Contactmentioning

confidence: 99%

See 1 more Smart Citation

Ohmic Contacts to GaAs: Fundamentals and Practice

Piotrowska

1993

Acta Phys. Pol. A

View full text Add to dashboard Cite

Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The paper emphasizes the reactions at the metal/GaAs interface and the structural factors which govern its electrical behavior and long-term stability. Results on the optimization of conventional gold-based ohmic contacts together with recent achievements in the technology of non-alloyed.contacts are overviewed.PACS numbers: 73.40Ns Criteria for a good ohmic contactModern device concepts strongly depend on reliable and well-controlled electrical contacts through which one has to communicate with the interior of the device from the outside world. In particular, micron and submicron size Ill-V devices can be fully exploited only with adequate ohmic contacts. In addition to a wide variety of device and circuit applications, good quality ohmic contacts are required for investigating the physical and electrical properties of bulk materials and related III-V heterostructures. Consequently, much attention has been recently devoted to the development of ohmic contacts to III-V materials, and the research area include both, the fundamental behavior of metal/semiconductor contacts and the new techniques for improving the properties of ohmic contacts [1][2][3][4][5][6][7].The purpose of this paper is to bring together much of the fundamental and practical knowledge on the formation of ohmic contacts to GaAs. First, we give brief overview of the requirements for ohmic contacts in modern GaAs devices. Next, we shall comment on the actual state of understanding of the formation of potential barriers developing at metal/GaAs interfaces. While the detailed discussion of theories of metal/GaAs interface is beyond the scope of this article, basic concepts applicable to fabricate low-resistance contacts will be provided. The main part of the paper is devoted to up-todate approaches in the fabrication of ohmic contacts. We shall emphasize the reactions at the metal/semiconductor interface and the stuctural factors which govern its electrical behavior and long-term stability. Key technological issues of advanced contact technology will be given in Sec. 4.The main constraint on the choice of material for an ohmic contact is to ensure that it has the correct electrical properties. They are characterized by the (491)

show abstract

Section: Criteria For a Good Ohmic Contactmentioning

confidence: 99%

“…4 Ga0 . 6 As phase forms at 700°C. The microstucture of the annealed In/GaAs contacts was shown to strongly depend on the details of contact preparation and annealing [25][26][27][28][29][30].…”

Section: Chemical Reactions At Metal/gaas Interfacesmentioning

confidence: 99%

Ohmic Contacts to GaAs: Fundamentals and Practice

Piotrowska

1993

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…In the experiment, the constant current (I) was set between two near electrode pads to measure the corresponding voltage (V), so the tatal resistance (R tot ) can be caculated by the relationship between V and I. R tot is composed of double contact resistance and the series resistance of a conductive layer between double ohmic contact layer. According to the equivalent circuit model, a formula of R tot with different distance (l n ) can be induced [5][6][7][8]. …”

Section: The Measurement Metodsmentioning

confidence: 99%

Research on rapid thermal annealing of ohmic contact to GaAs

Wang

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

View full text Add to dashboard Cite

In order to increase heat disperation and improve power and reliability of GaAs-based semiconductor lasers, the rapid thermal annealing (RTA) of ohmic contact to GaAs were optimized. The ohmic contact multi-layer metals of Ni/AuGe/Ni/Au on n-GaAs and Ti/Pt/Au on p-GaAs at annealling temperature of 380~460℃ and annealing duration of 40s~80s were calibrated. The rectangular transmission line model (RTLM) were adopted to calculate the specific contact resistance. For n-GaAs ohmic contact, the optimized contact resistivity is 2.76×10-6 Ω·cm 2 at annealing temperature of 420 ℃ for 60s. Under the same annealling conditions for p-GaAs, the contact resistivity is 3.91×10-5 Ω·cm 2 . The 808nm laser diode with double-side light output using the optimized RTA conditions, the maximum output power is more than 3W at operationg current of 4A.

show abstract

“…11 It was also found that the R C values of the NiInGe contacts were reduced by increasing the total area of the In x Ga 1Ϫx As layers covering the GaAs substrate, as shown in the previous experimental results for In-based ohmic contacts. 4 Therefore, it is believed that the In x Ga 1Ϫx As layers with various In concentrations (x) would have low "effective" barrier height both at the n-GaAs/nIn x Ga 1Ϫx As interface and the n-In x Ga 1Ϫx As/NiGe interface, as shown in Fig. 9b.…”

Section: Acknowledgementmentioning

confidence: 99%

“…However, the AuGeNi contacts have rough surface, deep diffusion depths into the GaAs substrate, and poor thermal stability after contact formation. [2][3][4] In order to improve these undesirable properties of the AuGeNi contacts, nongold NiGe ohmic contacts have been developed. 5 The NiGe contacts were found to have excellent thermal stability during isothermal annealing at 400°C, smooth surface, and shallow diffusion depth into the GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Microstructural analysis of NiInGe ohmic contacts for n-type GaAs

Tsunoda

Murakami

2002

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

NiInGe ohmic contact materials, which are attractive to use in future GaAs devices, were previously developed in our laboratories. Although the NiInGe contacts provided low contact resistances of about 0.3 ⍀-mm and excellent thermal stability, further reduction of the contact resistance (R C ) of the NiInGe contacts was mandatory to use these contacts in submicron devices. In this paper, the microstructural parameters, which influence the R C values, were investigated by correlating the R C values with the microstructure at the interface between the contact materials and the GaAs substrate. The R C values of the NiInGe contacts were found to depend strongly on the volume fraction and the In concentration (x) of the In x Ga 1Ϫx As compound semiconductor layers, which were formed at the metal/GaAs interface. Both the volume fraction and the In concentration of the In x Ga 1Ϫx As layers were found to depend on the thickness of the In layer used in the NiInGe contact and the annealing temperature to form the ohmic contact. A R C value of 0.18 ⍀-mm was obtained for the Ni (18 nm)/In (13 nm)/Ge (30 nm) contact (where a slash "/" indicates the deposition sequence) after annealing at temperature of 650°C for 5 sec.

show abstract

Development of ohmic contact materials for GaAs integrated circuits

Cited by 53 publications

References 187 publications

Ohmic Contacts to GaAs: Fundamentals and Practice

Ohmic Contacts to GaAs: Fundamentals and Practice

Research on rapid thermal annealing of ohmic contact to GaAs

Microstructural analysis of NiInGe ohmic contacts for n-type GaAs

Contact Info

Product

Resources

About