2014 27th International Vacuum Nanoelectronics Conference (IVNC) 2014
DOI: 10.1109/ivnc.2014.6894787
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Development of novel CNT field emitter array with gate electrode

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“…There are many studies on the FE of CNT arrays and/or films of different configurations and fabricated using different methods [83,112,113], and most of them have reported emission currents ranging from 1 mA • cm −2 to 1 A • cm −2 . One limitation on CNT emitters achieving higher FE current density is considered to be the too weak junction between CNTs and their substrate against Coulomb force [114]. Kato et al developed a CNT rooting technology using titanium carbide, which allows the strong junctions during operation of CNT field emitters to be retained [114].…”
Section: Computational Analysis Of Fe From Cntsmentioning
confidence: 99%
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“…There are many studies on the FE of CNT arrays and/or films of different configurations and fabricated using different methods [83,112,113], and most of them have reported emission currents ranging from 1 mA • cm −2 to 1 A • cm −2 . One limitation on CNT emitters achieving higher FE current density is considered to be the too weak junction between CNTs and their substrate against Coulomb force [114]. Kato et al developed a CNT rooting technology using titanium carbide, which allows the strong junctions during operation of CNT field emitters to be retained [114].…”
Section: Computational Analysis Of Fe From Cntsmentioning
confidence: 99%
“…One limitation on CNT emitters achieving higher FE current density is considered to be the too weak junction between CNTs and their substrate against Coulomb force [114]. Kato et al developed a CNT rooting technology using titanium carbide, which allows the strong junctions during operation of CNT field emitters to be retained [114].…”
Section: Computational Analysis Of Fe From Cntsmentioning
confidence: 99%