Development of no flow underfill technology for next generation flip chip products

Pendse, R.; Choi, Yong-Won; Kim, K.M.; Narvaez, G.; Jafari, B.; Singh, Inderjit

doi:10.1109/ectc.2005.1441281

Cited by 5 publications

(2 citation statements)

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“…Since under-fill (UF) solves problems associated with bondability, layer-detachment, cracks due to thermal stress, etc., recently more importance has been paid to the improvement of the performance and the reliability of interconnections through wafer-level under-fills [1][2][3]. Conventionally, capillary UF is injected into dies/wafers attached to an active/passive interposer after the reflow and thermo-compression bonding.…”

Section: Introductionmentioning

confidence: 99%

Non-conductive film underfill for 3D integration of 20 pm-thick LSI wafers with fine Cu-TSVs

Murugesan

Bea

Koyanagi

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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The beneficial role played by non-conductive film (NCF) under-fill (UF) compared with the conventional capillary under fill (CUF) is meticulously investigated for the reliability issues in high-density 3D-integration at die/wafer-level. The NCF with co-efficient of thermal expansion (CTE) value of 35 ppm/ tremendously reduces the local deformation of 20 μm-thick three-dimensionally (3D)-stacked LSI die/wafer. This reduces the local mechanical stress in thinned 3D-LSI by nearly 5 times as against the CUF with the CTE value of 60 -70 ppm/ . Both μ-RS and μ-XRD data showed only ~250 MPa of tensile stress on the back surface of 20 μm-thick stacked die/wafer with NCFUF, whereas it was more than five-times larger (~1400 MPa) for CUF. μ-XRD data illustrates that the cause for residual stress in the bump-space region and above the μ-bump are respectively due to the lattice tilt and change in lattice space.

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Section: Introductionmentioning

confidence: 99%

Non-conductive film underfill for 3D integration of 20 pm-thick LSI wafers with fine Cu-TSVs

Murugesan

Bea

Koyanagi

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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“…And the material is known and described as "no flow underfill" (NUF) since that is not flowing type into narrow gap (3)- (12) . Generally, NUF is constructed from thermosetting resin system, and one of main features of NUF is in flux capability.…”

Section: Introductionmentioning

confidence: 99%

Reliability Evaluation of Warpage of Flip Chip Package with Some Kinds of Underfill Material

Katsurayama

Saka

2008

JMMP

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Currently, the flip chip package is one of the standard semiconductor packages in the world market. Also, there are variety of materials and configurations used in flip chip packages with further high performance or miniaturization. From the encapsulate materials point of view, many types of assembly methods are presently studied on a current standard process as well as novel proposed processes. A highly reliable package depends on properties of constituent. Additionally, there is a possibility that the assembly process to encapsulation affects the warpage behavior and reliability performance. The present paper reports the relationship between warpage and other parameters depending on not only the material properties but also the encapsulating process.

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NCF for wafer lamination process in higher density electronic packages

Honda

Enomoto

Nagai

et al. 2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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Development of no flow underfill technology for next generation flip chip products

Cited by 5 publications

References 0 publications

Non-conductive film underfill for 3D integration of 20 pm-thick LSI wafers with fine Cu-TSVs

Non-conductive film underfill for 3D integration of 20 pm-thick LSI wafers with fine Cu-TSVs

Reliability Evaluation of Warpage of Flip Chip Package with Some Kinds of Underfill Material

NCF for wafer lamination process in higher density electronic packages

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