In the present work, we have studied the ferromagnetic nature of the (Fe, Ni) co-doped Zn1-x-y NiyFexO (y = 0.01 and x = 0.01, 0.03, 0.05) thin lms fabricated through the RF magnetron sputtering on Silicon (400) substrate. Structural information of the deposited transition metal-doped ZnO thin lms was studied through X-ray Diffraction (XRD) techniques. The surface roughness and average grain size of the thin lms examine through Atomic Force Microscopy (AFM). The optical band gaps of the thin lms have been analyzed through the UV-Vis spectroscopy and it was appropriate for the optoelectronic devices. Tau'c Plots were used for the calculation of the band gap by extrapolating the (αhν) = 0, the straight-line portion of the plot to zero absorption coe cient. The magnetic study of these thin lms con rmed the ferromagnetic (FM) behavior. RT-FM in all the deposited thin lms was discuses on the base of polaron percolation theory.