Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AlGaN-based ultraviolet light-emitting diodes

Park, Jun‐Beom; Park, Hyung-Jo; Bae, Hyojung; Jeong, Tak; Han, Jung-Geun; Kwak, Joon Seop; Ha, Jun‐Seok

doi:10.7567/apex.9.082601

Cited by 7 publications

(6 citation statements)

References 18 publications

(19 reference statements)

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“…The Sn 2+ ions donate electrons to Pd 2+ ions to form Sn 4+ ions, whereupon Pd 2+ ions are precipitated as metallic Pd. 15,24 Figure 1a is the image of precipitated Pd NPs on SWCNTs. (a) Sample is stirred with a 1: 3 ratio of Pd activator and SWCNTs dispersion and sprayed on a Cu mesh.…”

Section: Resultsmentioning

confidence: 99%

“…14 The large difference in work function means that the electron flow of p-AlGaN and electrodes is not smooth, which causes an increase in contact resistance. 15 Many reports have been published that attempt to change the electrical properties of CNTs by combining metals such as Rh, Au, Pd and Pt with CNTs. [16][17][18][19][20] We have developed TCEs for UV region using single walled carbon nanotubes (SWCNTs) and Nickel.…”

mentioning

confidence: 99%

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Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N

Park¹,

Rho²,

Bae³

et al. 2018

ECS J. Solid State Sci. Technol.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N

Park¹,

Rho²,

Bae³

et al. 2018

ECS J. Solid State Sci. Technol.

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“…Another drawback of ITO is the high cost of indium, the supply of which is limited. For these reasons, there have been considerable efforts to find a replacement for ITO, including graphenes, , metal nanowires, ,,, thin metals, metal oxides, , topological insulators, − and conducting polymers. , However, none of these efforts have been able to identify a fundamental solution to the trade-off between electrical conductivity and optical transmittance, particularly for device applications in the deep-UV (DUV) region.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

Lee

Son

et al. 2017

ACS Appl. Mater. Interfaces

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Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-AlGaN layer (ρ = 3.2 × 10 Ω·cm). The Ohmic conduction mechanism at the interface between the AlN film and the p-AlGaN layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.

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“…Furthermore, Ni nanoparticles were embedded within single-wall CNTs (NP-SWCNTs) by means of an electroless plating method in order to fabricate TCEs for AlGaN-based UV LEDs (375 nm). 71 UV LEDs fabricated with NP-SWCNT TCEs was shown to produce a 32% higher optical output power than UV LEDs with conventional Ni/Au electrode. The Ni nanoparticles were suggested to improve the electrical conductivity of TCEs and formed ohmic contacts to p-GaN.…”

Section: Ohmic Contacts To P-gan For Near Uv Ledsmentioning

confidence: 99%

“…The specific contact resistance and transmittance of optimal F-doped ITO were measured to be 9.12 × 10 65 However, the LEDs with few-layer GR had a high forward voltage larger than 10 V at 2 mA and were burnt out at high current injection. Thus, to improve the contact resistance and the stability of nanomaterialbased TCEs, various techniques, including interface engineering, [69][70][71][72][73][74][75][76][77][78] hybrid nanomaterial structures, [79][80][81][82][83] and chemical doping, [84][85][86][87] have been extensively studied.…”

Section: Ohmic Contacts To P-gan For Near Uv Ledsmentioning

confidence: 99%

Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

Park

Kim

Cho

et al. 2017

ECS J. Solid State Sci. Technol.

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There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes (DUV LEDs) exhibit inadequately low external quantum efficiencies (EQEs). The low efficiencies are attributed to the inherent material properties of high-Al-content AlGaN including strained epitaxial layers, low carrier concentrations, and strong transverse magnetic (TM)-polarized light emission. Extensive efforts have been made to tackle these challenging issues and technological developments have been achieved and enabled the fabrication of reasonable EQE LEDs. In this review, recent advances in the growth of high-quality AlGaN epitaxial layers, transparent and reflective ohmic contacts, and light extraction for AlGaN-based UV LEDs are reviewed. Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) are of technological importance because of their applications in numerous areas such as water purification, biological analysis, sensing, epoxy curing, high-density optical storage, white light illumination, UV adhesives, 3-dimensional (3D) printer and UV-coating.1,2 These applications are made possible because of their wide bandgap energy range in the UV spectrum, which spans from 6.2 eV (AlN) to 3.4 eV (GaN), namely, from UV-A (320-400 nm), UV-B (290-320 nm) to UV-C (200-290 nm).3-7 The external quantum efficiency (EQE) of Al x Ga 1-x N-based UV LEDs decreases rapidly as the molar fraction (x) of Al increases, namely, as the wavelength decreases, as illustrated in Figure 1. 8 Thus, a great deal of effort has been made in order to improve the EQE of UV LEDs. The effort notwithstanding, however, the EQE of AlGaN-based UV LEDs is still insufficiently low. The typical EQE of UV LEDs, specifically in the UV-C spectral range (100-280 nm), is less than 5% and decreases down to 10 -6 % for 210-nm AlN-based UV LEDs. 4 These low EQEs are associated with the intrinsic material properties of Al x Ga 1-x N.1,2 Figure 2 exhibits a schematic diagram of a typical AlGaN UV LED structure grown on a sapphire substrate. The structure consists of a Si-doped n-type AlGaN, an Al x Ga 1-x N/Al y Ga 1-y N multiple-quantum well (MQW) active region, an AlGaN-based electron-blocking layer (EBL), a Mg-doped p-type AlGaN, and a Mg-doped p-type GaN. Almost every layer in the structure poses different technical issues, which limit the efficiency of UV LEDs, as shown in Figure 2. First, increasing the Al content generally results in a poor crystallinity of AlGaN epilayers, causing a poor internal quantum efficiency (IQE). Second, both n-type and ptype doping efficiencies of AlGaN are difficult to increase because the ionization energies of acceptor (Mg) and donor (Si) dopants largely increase with increasing Al content. The low doping efficiency causes several technological problems: (i) a poor electrical efficiency (EE) attributable to high-resistance contacts on resistive n-type and p-type AlGaN; (ii) current crowding causing non-uniform current in...

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Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AlGaN-based ultraviolet light-emitting diodes

Cited by 7 publications

References 18 publications

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N

Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

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Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AlGaN-based ultraviolet light-emitting diodes

Cited by 7 publications

References 18 publications

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al0.3Ga0.7N

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al0.3Ga0.7N

Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

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Product

Resources

About

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N

Transparent Electrodes Fabricated from Single Walled Carbon Nanotubes and Ni Nanoparticles with Low Contact Resistance to p-Al_0.3Ga_0.7N