Development of multi-element monolithic germanium detectors for X-ray detection at synchrotron facilities

Manzanillas, L.; Aplin, S.; Balerna, A.; Bell, P. J.; Casas, J.A.; Cascella, M.; Chatterji, S.; Cohen, C.; Dennis, G.; Fajardo, P.; Graafsma, H.; Hirsemann, H.; Iguaz, F.J.; Klementiev, Konstantin; Kołodziej, Tomasz; Martin, T. A.; Menk, R.; Orsini, F.; Porro, M.; Quispe, Marcos; Schmitt, B.; Tartoni, N.; Turcato, M.; Ward, C. P.; Welter, Edmund

doi:10.1016/j.nima.2022.167904

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Simulation Of Detector Performances1

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Cited by 5 publications

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“…A dedicated simulation chain has been implemented and it includes all the steps from the interaction of X-rays with matter to a reconstructed energy spectrum using simulated raw-data-like waveforms. This simulation chain, based on Geant4, COMSOL Multiphysics™ (Semiconductor module) linked to Allpix-squared framework [6] and also on SSD software packages, is schematically represented in Figure 6-left and is described in details in [7].…”

Section: Simulation Of Detector Performancesmentioning

confidence: 99%

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

Orsini

Aplin

Balerna

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Simulation Of Detector Performancesmentioning

confidence: 99%

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

Orsini

Aplin

Balerna

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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Heteroepitaxial α‐Ga₂O₃ Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure

Kim,

Park

et al. 2024

Physica Rapid Research Ltrs

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This study explores the potential of 700‐nm‐thick heteroepitaxial α‐Ga2O3 thin films on c‐plane sapphire substrates for X‐ray detector applications. The crystal quality and optical bandgap of the heteroepitaxial α‐Ga2O3 thin films are comparable to those of high‐quality α‐Ga2O3 thin films. The α‐Ga2O3 thin film X‐ray detector with a metal–semiconductor–metal structure exhibits a charge neutral point shift, resulting in a short‐circuit current density of 9.07 nA cm−2 and an open‐circuit voltage of –1.2 V. The detector achieves the highest signal‐to‐noise ratio of 973 at 0 V, while the maximum sensitivity (14.7 μC Gyair−1 cm−2) occurs at 10 V. The proposed X‐ray detector demonstrates a reliable transient response and long‐term robustness, suggesting the promise of heteroepitaxial α‐Ga2O3 for low‐cost, high‐quality, large‐area X‐ray detectors.

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A New Demonstrator of Multi-element Germanium Detector With an Optimized Front-end Electronics

Tartoni,

Chatterji,

Crook

et al. 2022

2022 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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Development of multi-element monolithic germanium detectors for X-ray detection at synchrotron facilities

Cited by 5 publications

References 3 publications

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

Heteroepitaxial α‐Ga₂O₃ Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure

A New Demonstrator of Multi-element Germanium Detector With an Optimized Front-end Electronics

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Development of multi-element monolithic germanium detectors for X-ray detection at synchrotron facilities

Cited by 5 publications

References 3 publications

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

XAFS-DET: A new high throughout X-ray spectroscopy detector system developed for synchrotron applications

Heteroepitaxial α‐Ga2O3 Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure

A New Demonstrator of Multi-element Germanium Detector With an Optimized Front-end Electronics

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Product

Resources

About

Heteroepitaxial α‐Ga₂O₃ Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure