Development of microwave monolithic integrated circuit of power amplifier 26 – 30 GHz band for information and communication systems of new generation (5G)

Erofeev, E. V.; Shishkin, Dmitriy A.; Fedin, I.

doi:10.1088/1742-6596/1145/1/012004

Cited by 1 publication

(1 citation statement)

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“…These wide bandgap materials ensure some of the superior physical properties in terms of the formation of quantum well and carrier (electron/hole) gas at heterojunction interfaces. The formation of 2D Electron Gas (2DEG) channel at the heterointerface due to polarization-induced effects makes the AlGaN/GaN HEMTs extensively useful devices for future high-speed applications like power-electronics, radar systems and 5 G communications [1][2][3][4][5][6]. There are lots of research ongoing in the development of HEMT devices based on AlGaN/GaN/InGaN materials .…”

Section: Introductionmentioning

confidence: 99%

Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications

Jena,

Das,

Baral

et al. 2023

Phys. Scr.

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AlGaN HEMTs are popular devices for high-frequency applications. At higher frequencies, nonlinearity effects are major concerns and need serious attention. In this work, we have attempted to improve the linearity performance of graded channel AlxGa1-xN/GaN HEMTs in comparison with abrupt channel GaN HEMTs through Technology Computer Aided (TCAD) simulation. In graded channel HEMTs, linearly grading of Al composition in the AlGaN layer, reduces the local carrier densities and provides improvement in the carrier saturation velocity. This provides an avenue to improve the overall linearity performance. A complete set of figures of merits (FOMs) such as g_m2, g_m3, 〖VIP〗_2, 〖VIP〗_3, 〖IIP〗_3 and 〖IMD〗_3 for both devices are presented. The simulation results have been calibrated with reported experimental results available in the literature. The graded devices are observed to have better transconductance (gm) and drain current for gate voltages greater than -2V. The drop in gm is reduced by nearly 50% at the higher gate-to-source voltages. Moreover, the RF figure of merits such as the current gain cutoff frequency (fT) and a maximum frequency of oscillation (fmax) have been calculated for both devices. Due to the graded channel fT increases by 20% and fmax becomes twice which makes it a better choice for high-voltage and high-power applications. The impact of interface trap and leakage current performance on the graded channel device are also reported. The cutoff frequency reduces by 25% with an increase in trap charge concentration from 9e17/cm2 to 1e19/cm2. Also, it has been found that the graded channel device shows better linearity and lower intermodulation distortion in comparison to the abrupt device which has been calculated from the linearity parameters. The high gate leakage current in the case of the graded channel device can be reduced by adding a thin GaN cap layer on the AlGaN channel which can be a future prospect of improving the performance of the graded GaN device.

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