Development of microcracks in hydrogen-implanted silicon substrates

Penot, Jean-Daniel; Massy, Damien; Rieutord, F.; Mazen, F.; Reboh, S.; Madeira, F.; Capello, L.; Landru, Didier; Kononchuk, Oleg

doi:10.1063/1.4821239

Cited by 22 publications

(26 citation statements)

References 18 publications

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“…8,21,22 The cavities buried in the implanted region of the samples were imaged by optical microscopy. 23 Finally, the blisters eventually appearing on the wafer surface were characterized by atomic force microscopy (AFM). 24,25 Figure 1 shows the H and He depth profiles measured by SIMS in the co-implanted samples (H first, Fig.…”

Section: Experimental Details and Methodologymentioning

confidence: 99%

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Daghbouj

Cherkashin

Darras

et al. 2016

Journal of Applied Physics

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Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within Hrelated platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after coimplantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art. V

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Section: Experimental Details and Methodologymentioning

confidence: 99%

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Daghbouj

Cherkashin

Darras

et al. 2016

Journal of Applied Physics

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“…Implant / cleave wafers. Optical microscopy with heating a stage and mass spectroscopy are useful in characterizing hydrogen-implanted silicon used in the implant/cleave wafering scheme, and it was found that the amount of gas released when splitting the material is proportional to the surface area of microcracks [169]. Transmission electron microscopy has also been used in connection to the implant/cleave wafering scheme [170].…”

Section: Metrology Techniques For New Wafering Methodologies and Subsmentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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“…1.27) as the microcracks have a typical diameter of several micrometers. 92 Several scenarios have been put forward for microcrack development. It has been proposed that cracks interact in the same way as platelets do and that the exchange of gas between differently sized cracks is the driver for their evolution.…”

Section: Microcrack Developmentmentioning

confidence: 99%

Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology

Moriceau

Fournel

Rieutord³

2014

Silicon-on-Insulator (SOI) Technology

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Development of microcracks in hydrogen-implanted silicon substrates

Cited by 22 publications

References 18 publications

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology

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