Development of materials and processes for double patterning toward 32- nm node 193- nm immersion lithography process

Tarutani, Shinji; Tsubaki, Hideaki; Kanna, Shinichi

doi:10.1117/12.771773

Cited by 29 publications

(24 citation statements)

References 2 publications

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“…Continuous improvements in nanofabrication processing over the period of the last two decades have stimulated demand for next-generation computation and communication devices. A characteristic example of potential advancement for computation lies in the fabrication of nm-sized transistors with a resolution beyond 32 nm [6]. The fundamental interest in the submicron range stems from the potential to access and manipulate electrical [7], magnetic, optical, thermal and mechanical properties such as conductance quantization [8], bandgap modification [9] and coulomb blockade [10].…”

Section: Open Accessmentioning

confidence: 99%

Surface Growth and Diffusion Energetics of Ag Monolayers on Cu (001)

Antipas

2014

Metals

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Abstract:The growth of Ag monolayers on Cu (001) was studied by periodic Density Functional Theory (DFT). Despite the limited solid solubility of Ag in Cu, the growth of a single Ag overlayer on Cu (001) was predicted as feasible. In contrast, the growth of consecutive Ag monolayers was found to be energetically forbidden. Inter-diffusion of Ag monolayers into Cu was raised as a possibility but it was dependent on the sequence in which the Ag monolayers were introduced into the Cu bulk. The Ag layers preferred to be kept neither too far apart nor too close to each other, the optimum spacing between two Ag monolayers determined to be that of two consecutive Cu layers. Ag diffusion mediated tensile stress in the Cu cell by causing an increase of the unit cell constant by as much as 22%. Interactions between the Ag and Cu species also involved a degree of covalency. In general, progression of a surface Ag monolayer into the Cu bulk involved charge depletion over the Ag species and a simultaneous charge concentration over neighboring Cu atoms; this mechanism was found to influence Cu up to a depth of four surface layers.

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Section: Open Accessmentioning

confidence: 99%

Surface Growth and Diffusion Energetics of Ag Monolayers on Cu (001)

Antipas

2014

Metals

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“…NTI serves as a key enabling technology for imaging C/H and trench patterns in ArF immersion exposure because of advantage of optical contrast compared to positive tone imaging (PTI) [17][18][19][20]. Conversely, such NTI system advantages might be not useful for EUV exposure because wavelength of EUV light (13.5 nm) is enough short to optically resolve narrow trench and contacts.…”

Section: Introductionmentioning

confidence: 99%

Negative-tone Imaging with EUV Exposure toward 13 nm hp

Tsubaki

Nihashi

Tsuchihashi

et al. 2016

J. Photopol. Sci. Technol.

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Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm 2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm 2 . Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm 2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm 2 to 24 mJ/cm 2 . On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photoacid generator (PAG) and polymer. Conventional EUV absorber which comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

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“…As well known, negative tone imaging (NTI) process with ArF immersion exposure has advantages in fine C/H and trench imaging due to its good optical imaging property compared to that of positive tone imaging (PTI) [1][2][3][4]. However, it is not clear that negative tone imaging with EUV exposure would have advantages like ArF immersion, since there's still possibility to be able to obtain with good enough optical imaging property with PTI due to short wavelength of 13.5nm, one fourteenth of ArF wavelength, even with dark field mask.…”

Section: Introductionmentioning

confidence: 99%

Negative Tone Imaging Process and Materials for EUV Lithography

Tarutani

Nihashi

Hirano

et al. 2013

J. Photopol. Sci. Technol.

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The advantages of NTI process in EUV is demonstrated by optical simulation method for 0.25NA and 0.33NA illumination system with view point of optical aerial image quality and photon density. The extendablity of NTI for higher NA system is considered for further tight pitch and small size contact hole imaging capability. Process and material design strategy to NTI were discussed with consideration on comparison to ArF NTI process and materials, and challenges in EUV materials dedicated to NTI process were discussed as well. A new polymer was well designed for EUV-NTD process, and the resists formulated with the new polymer demonstrated good advantage of resolution and sensitivity in isolated trench imaging, and 24 nm half pitch resolution at dense C/H, with 0.3NA MET tool.

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Development of materials and processes for double patterning toward 32- nm node 193- nm immersion lithography process

Cited by 29 publications

References 2 publications

Surface Growth and Diffusion Energetics of Ag Monolayers on Cu (001)

Surface Growth and Diffusion Energetics of Ag Monolayers on Cu (001)

Negative-tone Imaging with EUV Exposure toward 13 nm hp

Negative Tone Imaging Process and Materials for EUV Lithography

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