Abstract:The introduction of transition metal doping, particularly Fe3+, into high‐performance microwave dielectrics can make “smart” materials that switch between a high‐Q, low loss state and a low‐Q, high loss state using a small external magnetic field. In this study, the dielectric and magnetic properties of the high permittivity host material LaAlO3 (εr = 22.5), when doped with Fe3+, are reported. Spin losses dominate the loss tangent at cryogenic temperatures and survive up to room temperature. Peaks in the loss … Show more
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