2009
DOI: 10.1109/tasc.2009.2017913
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Development of Low Noise THz SIS Mixer Using an Array of Nb/Al-AlN/NbTiN Junctions

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Cited by 4 publications
(2 citation statements)
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“…The main reason is that the operational frequency exceeds the gap frequency of niobium (∼ 700 GHz), which leads to the loss of the SIS mixers. Another suggested causality is shortage of local oscillator power [9]. Karpov et al [9] indicates that it is difficult to pump SIS mixers due to poor LO power around 1 THz, and then if SIS mixers are pumped enough, the increased LO power may improve the noise temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…The main reason is that the operational frequency exceeds the gap frequency of niobium (∼ 700 GHz), which leads to the loss of the SIS mixers. Another suggested causality is shortage of local oscillator power [9]. Karpov et al [9] indicates that it is difficult to pump SIS mixers due to poor LO power around 1 THz, and then if SIS mixers are pumped enough, the increased LO power may improve the noise temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Another suggested causality is shortage of local oscillator power [9]. Karpov et al [9] indicates that it is difficult to pump SIS mixers due to poor LO power around 1 THz, and then if SIS mixers are pumped enough, the increased LO power may improve the noise temperature. The recent active LO developments enable ∼ 1mW LO power generation around 1THz with a power combining method [10].…”
Section: Introductionmentioning
confidence: 99%