Development of “kink” in the output I–V characteristics of pseudomorphic hemt's after hot-electron accelerated testing

Meneghesso, Gaudenzio; Cogliati, Beatrice; Donzelli, Gianpaolo; Sala, D.; Zanoni, Enrico

doi:10.1016/s0026-2714(97)00138-8

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Consequently, for further improvement of AlGaN/GaN HEMTs it is crucial to investigate the impact of the kink effect on transport properties of the AlGaN/GaN HEMT's. Many studies have correlated kink effect with defects on Al-GaN/GaN transistors [22]. For this reason we developed an analytical current-voltage model for AlGaN/GaN power HEMT that incorporates the expression of concentration T N  .…”

Section: Kink Effect In Algan/gan Hemtsmentioning

confidence: 99%

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Charfeddine¹,

Belmabrouk²,

Zaïdi³

et al. 2012

JMP

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A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current

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Section: Kink Effect In Algan/gan Hemtsmentioning

confidence: 99%

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Charfeddine¹,

Belmabrouk²,

Zaïdi³

et al. 2012

JMP

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“…Depending on the device structure and layout, on the gate length and on the properties of epitaxial materials, the kink effect may occur at different drain voltage values V DSkink and may have a different bias dependence [1], light sensitivity [2], relationship with impact ionization [1], [3], dynamic behavior [3], and dependence on aging and surface treatments [4], [5]. Three explanations suggested for the kink effect have been clearly summarized in [2].…”

Section: Introductionmentioning

confidence: 99%

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Meneghesso

Zanon

Uren

et al. 2009

IEEE Electron Device Lett.

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An anomalous kink effect has been observed in the room-temperature drain current ID versus drain voltage VDS characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low VDS) and subsequent release (at high VDS) of negative charge, resulting in a shift of pinch-off voltage VP toward more negative voltages and in a sudden increase in ID. The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup

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“…In this work, devices under test were fabricated using undoped GaN channel layers of different thicknesses (thin, medium, and thick); interaction between hot electron effects and electron traps lead to a g m overshoot effect which was enhanced in devices having a thin GaN channel. This transconductance overshoot, previously unexplained [18] is therefore another sign of the presence of deep levels in GaN HEMTs, as current collapse [19], [20] or kink effects [21], [22]. A physics-based explanation of this effect is proposed and discussed, which is relevant for the characterization of deep levels effects in scaled GaN HEMTs.…”

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confidence: 93%

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Zhan,

Rampazzo,

De Santi

et al. 2023

IEEE Trans. Electron Devices

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DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN channel layer were compared. An abnormal transconductance (g m ) overshoot accompanied by a negative threshold voltage (V TH ) shift was observed during I DS -V GS sweep in devices with thinner GaN layer. At the same time, a non-monotonic increase in gate current was observed. In OFF-state, electron trapping occurs in the undoped GaN layer or at the GaN/AlN interface, leading to a positive V TH shift. When the device is turning on at a sufficiently high V DS , electron de-trapping occurs due to trap impact-ionization; consequently, V TH and therefore I D suddenly recovers, leading to the g m overshoot effect. These effects are attributed to electron trap impact-ionization and consequent modulation of the device's electric field.

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Development of “kink” in the output I–V characteristics of pseudomorphic hemt's after hot-electron accelerated testing

Cited by 5 publications

References 5 publications

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

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