Development of Integrated Terahertz Broadband Detectors Utilizing Superconducting Hot-Electron Bolometers

Liu, Lei; Xu, Haidi; Percy, R.; Herald, D.; Lichtenberger, A. W.; Hesler, Jeffrey L.; Weikle, Robert M.

doi:10.1109/tasc.2009.2018268

Cited by 28 publications

(2 citation statements)

References 17 publications

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“…Over the past few decades, due to the advancement in the nanoscale fabrication, there has been a significant surge of progress in enabling integrated, compact and efficient chip-scale solid-state semiconductor technology that can operate at room temperature and can be manufactured at a low cost, exploiting economies of scale. Considerable work has been directed towards miniaturized technologies demonstrated with quantum-cascade lasers [5], microbolometers [6], nanowires [7], novel plasmonic nanostructures [8], metamaterials [9] and ultrafast conductive semiconductor materials [10]. This progress has resulted a major step towards a more holistic approach for realizing the development of THz systems for applications in communication, spectroscopy and hyperspectral imaging [11].…”

Section: Introductionmentioning

confidence: 99%

Terahertz Conductivity of Nanoscale Materials and Systems

Goyal¹,

Tiwari²

2022

Terahertz Technology

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The history of RF technology can provide human beings a powerful lesson that the infrastructure of modern-day wireless communication depends on the complexity and configurability of silicon-based solid-state devices and integrated circuits. The field of THz technology is undergoing a developmental revolution which is at an inflection point and will bridge the ‘technology’ and ‘application’ gap in meaningful ways. This quantitative progress is a result of continuous and concerted efforts in a wide range of areas including solid-state devices, 2D materials, heterogeneous integration, nanofabrication and system packaging. In this chapter, the innovative theoretical approaches that have enabled significant advancement in the field of system-level THz technology are discussed. The focus is kept on the formulation of terahertz conductivity which plays a critical role in the modeling of devices that integrate technologies across electronics and photonics. Further, the findings build on coupling a probe pulse of terahertz illumination into the photoexcited region of amorphous silicon are presented and discussed in detail. Terahertz light has a higher penetration depth for opaque semiconductor materials which provides an accurate method to measure the conductivity of novel materials for the construction of efficient solar cells. This paves the way for the possibility to develop energy systems can address the need for reconfigurability, adaptability and scalability beyond the classical metrics.

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Section: Introductionmentioning

confidence: 99%

Terahertz Conductivity of Nanoscale Materials and Systems

Goyal¹,

Tiwari²

2022

Terahertz Technology

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“…To enable this diverse set of applications, there has been a concerted effort in the research community to miniaturize complex THz systems into chip-scale form that are operable at room temperature. Wedged between the microwave band and the infrared spectrum, this effort has spanned across a large array of substrates ranging from solid-state to photonic devices 10–14 , 2D nano-materials 15,16 , quantum-cascade lasers (QCLs) 17–19 , microbolometers 20,21 , nanowires 22 , metamaterials 23 , and ultrafast photoconductive materials 24,25 . In recent years, even silicon, particularly complementary-metal-oxide-semiconductor (CMOS) based integrated circuits and chips have been demonstrated in the frequency range with power generation capability in the range of 100s of μW 26–29 and detection capability with sensitivities (noise-equivalent-power) in the sub-100 pW/ region 30–37 .…”

Section: Introductionmentioning

confidence: 99%

Programmable terahertz chip-scale sensing interface with direct digital reconfiguration at sub-wavelength scales

Sengupta

2019

Nat Commun

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The ability to sense terahertz waves in a chip-scale technology operable at room temperature has potential for transformative applications in chemical sensing, biomedical imaging, spectroscopy and security. However, terahertz sensors are typically limited in their responsivity to a narrow slice of the incident field properties including frequency, angle of incidence and polarization. Sensor fusions across these field properties can revolutionize THz sensing allowing robustness, versatility and real-time imaging. Here, we present an approach that incorporates frequency, pattern and polarization programmability into a miniaturized chip-scale THz sensor. Through direct programming of a continuous electromagnetic interface at deep subwavelength scales, we demonstrate the ability to program the sensor across the spectrum (0.1–1.0 THz), angle of incidence and polarization simultaneously in a single chip implemented in an industry standard 65-nm CMOS process. The methodology is compatible with other technology substrates that can allow extension of such programmability into other spectral regions.

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