Development of III-N UVAPDs for ultraviolet sensor applications

Sood, Ashok K.; Richwine, Robert A.; Welser, Roger E.; Puri, Yash R.; Dupuis, R. D.; Ji, Ming; Kim, Jeomoh; Detchprohm, Theeradetch; Dhar, Nibir K.; Peters, Roy L.

doi:10.1117/12.2032207

Cited by 4 publications

(5 citation statements)

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“…The avalanche gain of the UV-APD plotted in Figure 5 is 7.8×10 3 at the onset point of voltage breakdown (~73 V). (This experimentally measured onset point is ~23 V lower than previously achieved with GaN/AlGaN p-i-n APDs and is in good agreement with simulated results [1,8].) At this point the gain is seen to rise exponentially corresponding to the sharp rise in photocurrent due to the avalanche multiplication process, reaching above 5×10 6 at a reverse bias of 75 V.…”

Section: Gan/algan Uv-apd Electro-optical Performance 41 I-v and Gain Characteristicssupporting

confidence: 90%

“…For many space and defense applications, spectral information beyond that which can be provided by conventional visible sensors are desired especially where covertness is a requirement. Detection of shorter wavelengths over the UV spectrum provides greater spatial resolutions, which allows for various pixel sizes and larger formats [1][2][3]. UV sensing applications include chemical and biological detection of surface residues and bio-aerosol agents, machine vision, and space research for NASA and defense applications [4].…”

Section: Introductionmentioning

confidence: 99%

“…Avalanche photodiodes (APDs) based on AlGaN semiconductor alloys offer advantages of high optical gains, high sensitivity, low dark currents, and chemical and thermal stability for many demanding applications [4]. Development of arrays of APD pixels as small as 4 μm is achievable with this material technology [1]. Since the operating wavelength range of AlxGa1-xN APDs is adjustable by controlling the Al concentration in the material, these devices can be designed to detect photons over large portions of the UV spectrum.…”

Section: Introductionmentioning

confidence: 99%

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High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Sood

Zeller

Ghuman

et al. 2019

Image Sensing Technologies: Materials, Devices, Systems, and Applications VI

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Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10 6 and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

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Section: Gan/algan Uv-apd Electro-optical Performance 41 I-v and Gain Characteristicssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Sood

Zeller

Ghuman

et al. 2019

Image Sensing Technologies: Materials, Devices, Systems, and Applications VI

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“…A variety of applications in scientific, military and civilian fields have greatly promoted the development of ultraviolet (UV) photodetection technologies [1,2]. The intensity of UV light decays rapidly in the atmosphere environment.…”

Section: Introductionmentioning

confidence: 99%

Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure

Kang

Wan

2021

J. Phys. D: Appl. Phys.

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Semiconductor-based avalanche photodiodes (APDs) have the advantages of lower power and simpler fabrication of arrays compared with photomultiplier tubes. It is critical for weak-light imaging that the APD is operated under back illumination and with high linear gain. However, linear gain is fairly low for conventional PIN APDs. This paper presents a back-illuminated APD, whose multiplication layer is designed to be a GaN/AlN periodically stacked structure. The GaN/AlN heterostructure is introduced to enhance the ratio of ionization coefficient between electrons and holes, which proves to be helpful for increasing the linear gain. Under back illumination, the prototype device demonstrates a record-high external quantum efficiency (reflecting linear gain) of ∼5 × 102 at the reverse bias of 66 V. The device response spectra were also studied to further confirm that only the photo-excited electrons can trigger the collision ionization in the multiplication layer.

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“…The sensing structures, typically solutions of luminescent organic dyes or nanoparticles, are used for different techniques luminescent imaging which improves observation contrast and allows to trace in situ chemical and biological reactions [12]. The sensors for automation and industrial applications are based mostly on thin films or optical fibre technology [13][14][15]. The most common detection way is luminescence conversion of UV radiation to obtain visible emission spectrum range.…”

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confidence: 99%

Luminescent optical fibre sensor for UV-A detection

et al. 2014

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The article presents polymer optical fibre with sensitive luminescence cladding used for ultraviolet detection. The construction of polymethyl metacrylate (PMMA) fibre coated by organic dye doped polyurethane film is presented. The Tinopal (fluorescent optical brightener) incorporated into the polyurethane coating was used as UV indicator. The chosen dye allowed to direct UV-A detection with luminescence emission in visible range. The construction and fabrication process of UV sensitive polymer fibre is shown. The experimentally obtained characteristic using Nd: YAG (355nm) is presented. The high relative sensitivity up to 0.27mW -1 was obtained. It has been pointed potential applications of fabricated senor.Keywords: Polymethyl methacrylate (PMMA), polymer optical fibre (POF), luminescent based sensor, optical fibre sensor, UV sensor, Tinopal INTRODUCIONThe safety conditions of environmental monitoring for health protection have a high impact in optoelectronics detectors technology. The Sun radiation is important parameter of environmental monitoring. The World Health Organization defined UVA-UVC radiation ranges. The UV-C (100 -280nm) and UV-B (280 -315nm) are highly attenuated by the atmosphere but almost 90% of UV-A (315 -400nm) reach the earth's surface. The UV radiation has to be monitored because it causes e.g. the cancer skin risk and eye diseases [1]. The ultraviolet radiation is also used for scientific research, medicine, industry. It is used in water sterilization and food disinfection applications [2-3], automatic fire and explosion protection systems [4], combustion monitoring for energy production and many industrial treatment processes (curing technology [5], biodiesel production [6], UV lasers technology [7,8]). The invisible UV radiation has to be measured in above applications to assure health and safety working conditions. There are many conventional sensors such as photodiodes, phototransistors or photo multiplier tubes for UV detection [9][10][11]. They assure high price-performance ratio for many typical applications. Unfortunately they offer a single point measurement and can't be used in hazardous environments (explosion danger or strong electromagnetic field areas). The optical measurement techniques have been developed to use in above cases. The luminescence phenomenon in optical materials allows to convert electromagnetic radiation into the range suitable for electronic detectors (typically visible and near infrared range). The construction of sensing element depends on the application field. The ultraviolet luminescence conversion is used in many fields of microscopic detection for biology and medicine. The sensing structures, typically solutions of luminescent organic dyes or nanoparticles, are used for different techniques luminescent imaging which improves observation contrast and allows to trace in situ chemical and biological reactions [12]. The sensors for automation and industrial applications are based mostly on thin films or optical fibre technology [13][14][15]. The most com...

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Development of III-N UVAPDs for ultraviolet sensor applications

Cited by 4 publications

References 0 publications

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Experimental observation of the linear gain of back-illuminated ultraviolet avalanche photodiodes using a GaN/AlN periodically stacked structure

Luminescent optical fibre sensor for UV-A detection

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