Development of hot melt adhesive pad and its application to polishing of monocrystalline silicon

Abstract

This study has developed a new polishing pad and an accompanying group of parameters for polishing monocrystalline silicon. A hot melt adhesive polishing pad coated with SiC abrasive uses these parameters more effectively and provides better polishing quality when compared with a conventional wool pad. Three control parameters, feed rate, polishing load and turning speed of the polishing wheel, were tested to identify their impact on the polishing quality of the silicon surface. A silicon surface polished with the proposed new pad under optimum conditions can obtain surface roughness of 2.45 nm Ra with mirror-like appearance.

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

“…The subsurface damage of monocrystalline silicon was mainly due to the formation of amorphous layers on the surface, and the thickness of the amorphous layer can be dissected by the peak intensity of silicon in the Raman spectrum. 27,28 Fig. 5 depicts the Raman spectra of silicon wafers before and after CMP, where c-Si represents monocrystalline silicon and a-Si represents amorphous silicon.…”