Development of highly accelerated electromigration test

Unveiling the electromigration physics of ULSI interconnects through statistics

“…Hence, by examining the values of the shape parameter, one can expect different mechanisms in an EM process. For example, in the work performed by Tan et al [5], the use of a higher stress temperature retained the same mechanism as the standard EM test as indicated by the same shape parameter and verified by numerical modeling and failure analysis. On the other hand, the use of a higher current density stress factor produced a different mechanism as is evidenced from the different shape parameters obtained from the test data and, verified also through numerical simulation and failure analysis.…”

“…The log-likelihood function (L) for a three-parameter lognormal mixture is given by (5) where t j represents the jth failure data. Based on (5), the best-fit distribution parameters are obtained by solving the four partial derivative expressions in (6):…”

Experimental Studies of Al Interconnections

“…On the other hand, manufacturing plant is constantly striving to shorten accelerated life testing without compromising the accuracy of the result, a highly accelerated electromigration test is recently proposed that proven to shorten 80% of the test time while ensuring the invariant of the physical mechanism (Tan, Li, Tan and Low 2006).…”

Realistic modeling of electromigration in today�??s ULSI interconnections

“…35. Since the analysis of EM involves complex electrical-thermal-mechanical interactions, two couple-field analyses are employed in the study, namely the electrical-thermal coupled field analysis and the thermal-mechanical coupled field analysis [100]. Element solid 69 with tetrahedral shape is used in the electrical-thermal analysis, and solid 45 is used for the thermal-mechanical analysis.…”

“…Considering the implication (1), it has been reported that in the modern ULSI interconnect system, the electron wind force is not the sole driving force during EM [48,61], and hydrostatic stress has been identified as an increasing significant factor during EM as interconnect linewidth reduces toward sub-micron scale and below as reported by many [14,25,100]. For the implication (2), both our recent study [120] and report from others [17,22,24,121] have shown the temperature dependence of the pre-exponential term.…”