Development of high sensitivity, large frequency bandwidth ZnO-based accelerometers

Wong, Yiik Diew; Yuan, Yanhui; Du, Hejun; Xia, Xue

doi:10.1016/j.sna.2015.03.012

Cited by 21 publications

(13 citation statements)

References 18 publications

(24 reference statements)

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“…Piezoelectric accelerometers have many desirable features, such as extremely low power consumption, high sensitivity, inherent temperature stability, compatibility with the CMOS (complementary metal-oxide semiconductor) manufacturing process [8][9][10], high Q in the range of 80 to 100, high output impedance, and wide operating temperature range (up to 300℃) [8,11,12]. The design and fabrication of micromachined piezoelectric accelerometers have been reported widely [7][8][9][10][11][12][13][14]. Such an accelerometer will record translational and rotational inertial accelerations, as well as gravitational acceleration, as long as parts of these acceleration vectors are in line with the accelerometer's axis of sensitivity.…”

Section: E T E T E E T T T T T T D E T E Tmentioning

confidence: 99%

“…The lateral strain at any point (x,z) in the beam is (10) for 0<x<L. The lateral stress in the piezoelectric layer (ZnO) can be written as (11) for 0<x<L. The induced electric field, E in (x,z), in the thickness direction at a given (x,z) in the ZnO piezoelectric layer is therefore (12) for 0<x<L. Here, g 31 is the piezoelectric coefficient that can be related to the piezoelectric strain coefficient, d 31 , as (10) for 0<x<L. The lateral stress in the piezoelectric layer (ZnO) can be written as (11) for 0<x<L. The induced electric field, E in (x,z), in the thickness direction at a given (x,z) in the ZnO piezoelectric layer is therefore (12) for 0<x<L. Here, g 31 is the piezoelectric coefficient that can be related to the piezoelectric strain coefficient, d 31 , as (13) where ε and ε are the dielectric constant of the piezoelectric…”

Section: Voltage Modellingmentioning

confidence: 99%

“…Again, in- (10) for 0<x<L. The lateral stress in the piezoelectric layer (ZnO) can be written as (11) for 0<x<L. The induced electric field, E in (x,z), in the thickness direction at a given (x,z) in the ZnO piezoelectric layer is therefore (12) for 0<x<L. Here, g 31 is the piezoelectric coefficient that can be related to the piezoelectric strain coefficient, d 31 , as (13) where ε r and ε 0 are the dielectric constant of the piezoelectric layer and the permittivity of free space, respectively. By integrating E in (x, z) with respect to z, the induced voltage at any given x is then…”

Section: Voltage Modellingmentioning

confidence: 99%

“…The design and fabrication of micromachined piezoelectric accelerometers have been reported widely [7][8][9][10][11][12][13][14]. Such an accelerometer will record translational and rotational inertial accelerations, as well as gravitational acceleration, as long as parts of these acceleration vectors are in line with the accelerometer's axis of sensitivity.…”

mentioning

confidence: 99%

“…Active materials with larger piezoelectric constants, such as Lead ZirconateTitanate (PZT), can widen the performance gap of piezoelectric accelerometers [11,[18][19][20][21][22][23][24][25][26][27]. Zinc Oxide (ZnO) has also been employed for active piezoelectric film due to its relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce largearea films without pinholes, and proven compatibility with IC (integrated circuit) integration [28][29][30]. Various reports have described piezoelectric accelerometers using other piezoelectric materials such as YCOB crystals, PVDF, TrFE, Pb(Zr,Ti) O 3 , and Pb(Mn 1/3 Nb 2/3 )O 3 [31][32][33].…”

mentioning

confidence: 99%

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A Simple Analytical Model for MEMS Cantilever Beam Piezoelectric Accelerometer and High Sensitivity Design for SHM (structural health monitoring) Applications

Raaja¹,

Rathnasami²,

Sumangala³

2017

Transactions on Electrical and Electronic Materials

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Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

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