Development of high sensitivity 4H–SiC detectors for fission neutron pulse shape measurements

Wu, Jian; Jiang, Yong; Li, Meng; Zeng, L.; Li, Junjie; Gao, Hui; Zou, Dehui; Bai, Zhiyong; Cenming, Ye; Dai, Shixun; Lü, Yi; Ru, Rong; Du, Jinfeng; Fan, Xiaoqiang

doi:10.1063/1.4995811

Cited by 10 publications

(3 citation statements)

References 15 publications

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“…1,2 Due to its wide band gap, radiation hardness, high breakdown field and melting point, SiC is also a promising semiconductor for the fabrication of nuclear radiation detectors working in harsh environments, including at high temperature and dense radiation fields. [3][4][5] SiC-based diodes for radiation detection are highly sensitive to defects that introduce deep carrier traps, 3 especially to those with large capture cross section for minority carriers which hold the actual impact signal. Point defects in SiC are mainly created during i) semiconductor material growth, ii) device processing by ion-implantation or iii) during operation under radiation conditions.…”

Section: Introductionmentioning

confidence: 99%

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Capan

Brodar

Coutinho

et al. 2018

Journal of Applied Physics

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We provide direct evidence that the broad Z 1/2 peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged 4H-SiC, has two components, namely Z 1 and Z 2 , with activation energies for electron emission of 0.59 and 0.67 eV, respectively. We assign these components to Z = 1/2 → Z − 1/2 + e − → Z 0 1/2 + 2e − transition sequences from negative-U ordered acceptor levels of carbon vacancy (V C ) defects at hexagonal/pseudocubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of V C on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41 eV were determined for Z 1 (−/0) and Z 2 (−/0) transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z 1 and Z 2 . Positions of the first and second acceptor levels of V C at both lattice sites, as well as (=/0) occupancy levels were derived from the analysis of the emission and capture data.

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Section: Introductionmentioning

confidence: 99%

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Capan

Brodar

Coutinho

et al. 2018

Journal of Applied Physics

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“…Wu et al [108] investigated the performance of 4H-SiC detectors for fission neutron measurements. They demonstrated that increasing the thickness of the epitaxial layer from 20 to 120 μm improves sensitivity to neutron pulses by 139.8%.…”

Section: Fission Neutronsmentioning

confidence: 99%

SiC detectors: A review on the use of silicon carbide as radiation detection material

Napoli

2022

Front. Phys.

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Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that make it one of the most promising and well-studied materials for radiation particle detection. This review provides an overview of the main advantages in the use of SiC detectors and the current state of research in this field. Key aspects related to material properties, growth techniques, doping, defects, electrical contacts, and characterization methods are summarized, with particular emphasis on how these can be related to detector performance. The most recent and significant experimental results on the use of SiC diodes for the detection of electrons, protons, alpha, ions, UV radiation, x/γ-rays, and neutrons are discussed. The effects of high temperature operation and radiation damage on detector performance are outlined.

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“…As is well-known, the energy spectrum and number of neut-rons produced by fusion reactions can be used to characterize the temperature and the total amount of reaction products [14,15]. The pulsed neutron flux [16], energy spectrum [17,18] and time structure [19,20] are the most important parameters in measuring a pulsed neutron process.…”

Section: Introductionmentioning

confidence: 99%

A transient process observation method based on the non-homogeneous Poisson process model *

Zhao¹,

Ouyang²,

Guo³

et al. 2021

Chinese Phys. C

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The current-mode-counting method is a new approach to observing transient processes, especially in transient nuclear fusion, based on the non-homogeneous Poisson process (NHPP) model. In this paper, a new measurement process model of the pulsed radiation field produced by transient nuclear fusion is built based on the NHPP. A simulated measurement is performed using the model, and the current signal from the detector is obtained by simulation based on Poisson process thinning. The neutron time spectrum is reconstructed and is in good agreement with the theoretical value, with its maximum error of a characteristic parameter less than 2.3%. Verification experiments were carried out on a CPNG-6 device at the China Institute of Atomic Energy, with a detection system with a nanosecond response time. The experimental charge amplitude spectra are in good agreement with those obtained by the traditional counting mode, and the characteristic parameters of the time spectrum are in good agreement with the theoretical values. This shows that the current-mode-counting method is effective for the observation of transient nuclear fusion processes.

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Development of high sensitivity 4H–SiC detectors for fission neutron pulse shape measurements

Cited by 10 publications

References 15 publications

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling

SiC detectors: A review on the use of silicon carbide as radiation detection material

A transient process observation method based on the non-homogeneous Poisson process model *

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