Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling

Bender, Daniel A.; Cederberg, Jeffrey G.; Wang, Chengao; Sheik‐Bahae, Mansoor

doi:10.1063/1.4811759

Cited by 66 publications

(52 citation statements)

References 27 publications

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“…Despite the presently lower EQE, it is typically expected that the electrically injected GaAs system provides the most suitable candidate for EL cooling for a number of reasons. These include (i) the substantially larger reported internal quantum efficiencies (IQE), exceeding 99.5%, 1,18 which is of key importance especially for devices where photons will not be extracted in air; (ii) the mature fabrication technology; 4 and (iii) the potentially higher cooling rates due to the availability of lattice matched materials, allowing optically thick emitter regions and the larger optical density of states following from the larger refractive index. 2 To study EL cooling and the related photon and energy transport effects in GaAs based light emitters in the high power regime in more detail, we recently introduced the double diode structure (DDS) illustrated in Fig.…”

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confidence: 99%

Thermophotonic cooling in GaAs based light emitters

Radevici

Tiira

Sadi

et al. 2019

Applied Physics Letters

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Fundamental thermodynamic considerations reveal that efficient emission from an electrically injected light emitting diode (LED) can lead to the cooling of the device. This effect, known as electroluminescent (EL) cooling, has been identified decades ago, but it has not been experimentally demonstrated in semiconductors at practical operating conditions due to the extreme requirements set for the efficiency of the light emission. To probe the conditions of EL cooling in GaAs based light emitters, we have designed and fabricated LED structures with integrated photodiodes (PDs), where the optically mediated thermal energy transport between the LED and the PD can be easily monitored. This allows characterization of the fundamental properties of the LED and a path for eliminating selected issues encountered in conventional approaches for EL cooling, such as the challenging light extraction. Despite several remaining nonidealities, our setup demonstrates a very high directly measured quantum efficiency of 70%. To characterize the bulk part of the LED, we also employ a model for estimating the power conversion efficiency (PCE) of the LED, without the contribution of non-fundamental nonidealities such as photodetection losses. Our results suggest that the PCE of the LED peaks at around 105-115%, exceeding the 100% barrier required to reach the EL cooling regime by a clear margin. This implies that the LED component in our device is in fact cooling down by transporting thermal energy carried by the emitted photons to the PD. This provides a compelling incentive for further study to confirm the result and to find ways to extend it for practically useful EL cooling.Published under license by AIP Publishing. https://doi.

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confidence: 99%

Thermophotonic cooling in GaAs based light emitters

Radevici

Tiira

Sadi

et al. 2019

Applied Physics Letters

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“…1. Hence, the DDS arrangement allows direct observation of the lower limit of energy transfer between LED and PD, quantitatively expressed with the coupling quantum efficiency (CQE) defined as the ratio CQE = I 2 ∕I 1 , while circumventing the light extraction problems encountered in high-efficiency light emitter setups (Broell et al 2014;Hurni et al 2015;Gauck et al 1997;Bender et al 2013). The CQE is a central experimentally accessible figure of merit in the DDS context, as ELC can only be observed if the condition PCE = CQE � ∕U > 1 for the power conversion efficiency (PCE) is met.…”

Section: The Double Diode Structurementioning

confidence: 99%

Effect of interface recombination on the efficiency of intracavity double diode structures

et al. 2019

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In the past ten years, there has been significant progress in solid-state optical refrigeration, causing a renewed interest in the possibility of electroluminescent cooling (ELC) in light emitting diodes (LEDs). More recently, our work on III-As based intracavity double diode structures (DDSs) indicates that the threshold for ELC can be reached, in practice, at high powers and 300 K if certain non-radiative recombination mechanisms and photodetector (PD) losses are minimized. The studied DDSs consist of a LED, incorporating a high-quality GaAs active layer, optically coupled to a GaAs p-n homojunction PD. Both the LED and PD are integrated in a single device, offering a unique environment for studying ELC. In this paper, we provide a brief overview of the DDS characteristics and investigate the impact of non-radiative interface recombination on the LED, showing how the choice of the barrier layer materials can suppress this effect. We use experimental characterization techniques to calibrate numerical simulations, coupling the drift-diffusion model for charge transport to a photon transport model. To explore the interface effects, we compare DDSs with either GaInP/GaAs or AlGaAs/GaAs double heterojunctions. The results suggest that GaInP barriers allow interface recombination suppression that is sufficient to reach internal cooling in the LED. Keywords Electroluminescent cooling • Light-emitting diodes • III-As semiconductors • GaInP/GaAs double heterojunctions • Double diode structures This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD' 18.

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“…[32][33][34][35] One of the most intensively studied semiconductor devices for optical refrigeration are GaAs based quantum wells, whose EQE can be as high as 99.5%. 36,37 However, due to strong parasitic absorption, net cooling has not been achieved in III-V quantum wells. In 2013, Zhang et al reported the first laser cooling of 40 K in in CdS nanowires, which have strong coupling of exitons and longitudinal optical phonons (LOP), high EQEs, and weak parasitic absorption.…”

Section: Optical Refrigerationmentioning

confidence: 99%