Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Sood, Ashok K.; Egerton, E. James; Puri, Yash R.; Clarke, Frederick W.; Hwang, J.C.M.; Dabiran, A. M.; Chow, P. P.; Anderson, Tom; Gupta, Avi; Zwieback, Ilya

doi:10.1117/12.561584

Cited by 4 publications

(2 citation statements)

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“…There are many device structures under consideration for RF and Power amplifiers (1). These include HEMT (High Electron Mobility Transistor), HFET (Hetero-structure Field Effect Transistor), MOSHFET (Metal Oxide Semiconductor Hetero-structure Field Effect Transistor) and MESFET (Metal Semiconductor Field Effect Transistors) ( 1,2,3,4).…”

Section: Introductionmentioning

confidence: 99%

Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

et al. 2005

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GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature electronics applications that will replace GaAs and Silicon based devices and amplifiers for commercial and military applications. In this paper, we present GaN/AlGaN based HEMT device architecture with simulation and modeling results that includes AlN buffer layer followed by AlGaN layers on semi-insulating SiC substrates. The HEMT epitaxial layers were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. Key to high quality HEMT structures is the ability to grow high quality AlN Buffer layer and AlGaN layers. Details of the electrical and optical characteristics of the HEMT epitaxial layers are presented.

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Section: Introductionmentioning

confidence: 99%

Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

et al. 2005

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“…The many device structures under consideration for RF and power amplifiers include: HEMT (High Electron Mobility Transistor), HFET (Hetero-structure Field Effect Transistor), MOSHFET (Metal Oxide Semiconductor Heterostructure Field Effect Transistor) and MESFET (Metal Semiconductor Field Effect Transistors) [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

et al. 2006

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GaN /AlGaN transistors are being developed for a variety of RF electronic devices that will eventually replace GaAs-and silicon-based devices for commercial and military applications. In this paper, we present results from the optimization of the growth conditions for GaN/AlGaN HEMT structures. The HEMT epitaxial layers are grown via MOCVD. We demonstrate that the key to high quality HEMT structures is the ability to grow uniform AlGaN layers. Details of the structural, electrical and optical characteristics of the HEMT epitaxial layers are presented. In addition, we present results on an innovative ICP etching used for HEMT fabrication. This technique allows for low damage device processing and improved reliability. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/22/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 6121 61200A-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/22/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

Zhang

Wang

Dabiran

et al. 2005

Applied Physics Letters

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Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Cited by 4 publications

References 3 publications

Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

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