Development of Germanium-Based Wafer-Bonded Four-Junction Solar Cells

Höhn, Oliver; Siefer, Gerald; Janz, S.; Dimroth, Frank; Niemeyer, M.; Weiss, Charlotte; David, Laurent; Predan, Felix; Beutel, Paul; Schachtner, Michael; Müller, Ralph

doi:10.1109/jphotov.2019.2941770

Cited by 13 publications

(8 citation statements)

References 23 publications

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“…Presently, spectral response (SR) measurement has been primarily used to characterize the electrical performance of the sub-cells in multi-junction photovoltaic cells, which is based on the current limiting effect of applying bias lights on other sub-cells [16,17]. Previous studies have manifested that light-emitting diodes and tungsten lamps with filters whose wavelength ranges were mainly in the SR range of other sub-cells can serve as proper bias lights to make the interested sub-cell current-limiting, which has been widely applied in the SR measurement of MJ solar cells [18][19][20][21][22][23]. However, it's not suitable for the SR measurement of GaAs MJLPCs.…”

Section: Introductionmentioning

confidence: 99%

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Sun

Shi

Liu

et al. 2023

Preprint

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Quantitative electrical analysis of sub-cells is crucial for the designing of high-efficiency GaAs multi-junction laser power converters (MJLPCs). Spectral response (SR) measurement is the main mean of characterizing the electrical performance of sub-cell. However, all the sub-cells in GaAs MJLPCs have the same SR range, resulting that finding suitable bias lights to make the sub-cells current-limited is difficult for the SR measurement of GaAs MJLPCs. Here, we report a method of determining bias lights for the SR measurement of GaAs MJLPCs based on the variation rules of simulated short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. The method of determining bias lights is applicable to a variety of GaAs MJLPCs, including in original state, at high temperature or after high-energy particles irradiation. With the method of determining bias lights, the measured external quantum efficiency (EQE) curves of the 1st cell, the 2nd cell and the 3rd cell in a GaAs triple-junction LPC were successfully obtained. The work is anticipated to provide guidelines for further developments of high-efficiency and high-reliability III-V MJLPCs.

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Section: Introductionmentioning

confidence: 99%

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Sun

Shi

Liu

et al. 2023

Preprint

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“…Tandem solar cells of III-V semiconductors can achieve the maximum efficiency, which benefits by an efficient utilization of the solar spectrum and lattice match. Especially, the case of Ge-based III-V triple-junction (TJ) solar cells [1][2][3][4][5] have attracted much attention, which has been widely applied in space for energy supply. To confine the misfit dislocation and minimize the strain, the previous study reported 6 that multijunction (MJ) III-V devices use compositionally graded buffers, which have demonstrated solar-to-electrical conversion efficiency of 39.2% (1 sun AM1.5G).…”

Section: │ Introductionmentioning

confidence: 99%

Evaluation of electricity generation on GeSn single‐junction solar cell

Zhu

Cui

Wang

et al. 2022

Intl J of Energy Research

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Electricity generation of GeSn single-junction solar cell has been carefully examined in both its p-on-n and n-on-p configurations in its normal and inverted structures. The superior p + /n construction with a critical doping of the light-doped layer (N d = 7.5 Â 10 18 cm À3 ) has been observed. For the normal one, the active layer should be composed of 50-100 nm emitter and 3-5 μm base to less material costs. Moreover, dislocation density and 1 MeV electron fluence should be lower than 1 Â 10 5 cm À2 and 1 Â 10 10 cm À2 , respectively, which is helpful for obtaining a preferable conversion efficiency. To explore lower cost solar cell, the simulated results might be favorable to guide experimental fabrication of GeSn devices.

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“…Höhn et al [26] proposed four-junction solar cells based on germanium wafer bonding. The presented structure provided high efficiency, due to employing germanium which required an optimized Ge cell with rear-side passivation and a mirror.…”

Section: Introductionmentioning

confidence: 99%

CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

Rahimi

Shooshtari

2022

Applied Sciences

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Here we investigated a novel layer-based optimization technique to improve the performance of a CZTSe solar cell. By using this technique, the optical behavior and electrical properties of the proposed solar cell improved significantly as a result of the changes in the layer specifications and the layer materials. The structure of the cell consisted of an absorber laid on a conducting layer and covered by Indium Tin Oxide (ITO), with ZnO on its top surface. Due to the employment of the CSLO technique, a p+pn junction was formed between the absorber and window layers, which provided a lower recombination rate by transmitting more electrons and holes to the contacts. In addition, the main important parameters affecting the solar cell’s performance such as layer thickness, carrier lifetime, and total effect density were investigated. According to the results, the proposed CZTSe solar cell achieved a 32.6% and 79.5% efficiency and fill factor, respectively—which in comparison to a conventional solar cell is remarkable. Moreover, hybrid structures made by utilizing CZTS-based, Ge-based Cu2ZnGeSe4, and Si-based Cu2ZnSiSe4 with the proposed CZTSe-based solar cell were implemented and better results were achieved, yielding an efficiency of about 42, 50, and 34% and a fill factor of 66, 55, and 42%, respectively, due to the materials’ properties.

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Development of Germanium-Based Wafer-Bonded Four-Junction Solar Cells

Cited by 13 publications

References 23 publications

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Evaluation of electricity generation on GeSn single‐junction solar cell

CZTSe-Based Solar Cell Performance Improvement Using the CSLO Technique

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