Development of ferromagnetic semiconductors for applications in spin electronics: State and outlook

Orlov, A. F.; Kulemanov, I. V.; Parkhomenko, Yu. N.; Перов, Н. С.; Семисалова, А.С.

doi:10.1134/s1063739712080136

Cited by 2 publications

(3 citation statements)

References 51 publications

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“…Both interactions-EPI and SPI-lead to reducing the band gap energy. The effect of the SPI is largest at low temperatures and vanishes at T C because the magnetization is zero at T C , i.e., the magnetic ordering cannot influence the band gap (see Equation (5) for J e f f ), whereas the EPI contributes also above T C . Boncher et al [36] reported that the band structure of EuO and EuS is altered by magnetic ordering and is usually interpreted as conduction band splitting of spin-up and -down electrons.…”

Section: Dependence Of the Band Gap Energy On Temperature Spi And Epimentioning

confidence: 99%

“…Ferromagnetic semiconductors (FMS) which find applications in spin electronics and informatics are materials exhibiting both ferromagnetic and semiconductor properties [1,4,5]. While traditional electronics are based on the control of charge carriers, FMS allow also control of the quantum spin state, providing an almost complete spin polarization, an important property for spintronics applications [4].…”

Section: Introductionmentioning

confidence: 99%

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Competition between Electron–Phonon and Spin–Phonon Interaction on the Band Gap and Phonon Spectrum in Magnetic Semiconductors

Apostolov,

Apostolova,

Wesselinowa

2024

Applied Sciences

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Using the microscopic s-f model and Green’s function theory, we study the temperature dependence of the band gap energy Eg and the phonon energy ω and damping γ of ferro- and antiferromagnetic semiconductors, i.e., with different signs of the s-f interaction constant I. The band gap is a fundamental quantity which affects various optical, electronic and energy applications of the materials. In the temperature dependence of Eg and the phonon spectrum, there is a kink at the phase transition temperature TC or TN due to the anharmonic spin–phonon interaction (SPI) R. Moreover, the effect of the SPI R and electron–phonon interaction (EPI) A on these properties is discussed. For I>0,R>0, Eg decreases with increasing SPI and EPI, whereas for I<0,R>0, there is a competition; Eg increases with raising the EPI and decreases for enhanced SPI. For R<0, in both cases, the SPI and EPI reduce Eg. The magnetic field dependence of Eg for the two signs of I and R is discussed. The SPI and EPI lead to reducing the energy of the phonon mode ω = 445 cm−1 in EuO (I>0, R<0), whereas ω = 151 cm−1 in EuSe (I>0, R>0) is enhanced with increasing EPI and reduced with SPI. Both the SPI and EPI lead to an increasing of the phonon damping in EuO and EuSe. The results are compared with the existing experimental data.

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Section: Dependence Of the Band Gap Energy On Temperature Spi And Epimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Competition between Electron–Phonon and Spin–Phonon Interaction on the Band Gap and Phonon Spectrum in Magnetic Semiconductors

Apostolov,

Apostolova,

Wesselinowa

2024

Applied Sciences

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“…The formation of magnetic structures in semiconductors can be carried out by various methods: chemical vapor deposition, molecular beam epitaxy, or ion implantation. Thus, the implantation of crystalline silicon with transition metal ions (Co, Ni, and Fe) is used to create magnetic nanoclusters, as well as metal silicides [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

Zikrillayev,

Mavlonov,

Trabzon

et al. 2023

East Eur. J. Phys.

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One of the possible ways to obtain silicon with magnetic properties is the introduction of paramagnetic impurities into silicon: Cr, Mn, Fe, Ni, and Co. In our opinion, silicon materials containing magnetic nanosized clusters are most suitable for spintronic devices. The possibility of obtaining silicon with magnetic properties by diffusion doping was studied in this work. To obtain silicon doped with Cr, Mn, Fe and Ni impurity atoms, p-type single-crystal silicon with a specific resistance of ρ = 5 Ohm·cm and ρ = 0.5 Ohm·cm was used, and for doping with Co atoms, n-type silicon with resistivity ρ=10 Ohm·cm was used. The diffusion temperature and time were chosen such that, after diffusion annealing, the samples with impurity Cr, Fe, and Mn atoms remained highly compensated p-type, and when doped with impurity Co atoms, they remained high-resistance n-type. The results of the study showed that with decreasing temperature, the value of the negative magnetoresistance Δρ/ρ in the Si<Mn> samples increases and reaches its maximum value (about 800%) at T = 240 K, a further decrease in temperature leads to a decrease in the magnetoresistance, and at a temperature T = 170 K, the sign of the magnetoresistance is inverted. In Si <Cr> samples, with decreasing temperature, the positive magnetoresistance turns into a negative one, the value of which increases with decreasing temperature, and is achieved at T=100 K Δρ/ρ = 45–50%. In Si<Fe> samples, with decreasing temperature, the value of negative magnetoresistance increases monotonically and at T=100 K its value is Δρ/ρ = (100÷120) %. The study in Si<Сo> samples showed that with decreasing temperature the value of positive magnetoresistance increases and at Т=100 K it reaches Δρ/ρ = (17÷20) %. The study of magnetoresistance in samples - Si<Ni> showed that with decreasing temperature the value of positive magnetoresistance increases and at T=100 K it reaches Δρ/ρ = (10÷15) %. When studying the magnetic properties of p-Si <B, Mn> samples at low temperatures (below T=30 K), a ferromagnetic state was found, i.e. succeeded in obtaining a magnetic semiconductor material by the method of diffusion of a paramagnetic impurity. In the overcompensated Si <B, Mn> (n‑type) samples, no magnetic hysteresis was found. This shows a significant effect on the magnetic properties of the manganese impurity in silicon of its charge and, accordingly, spin state. Based on the results obtained, it can be argued that diffusion doping of silicon with manganese can be used to obtain silicon with magnetic properties.

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Development of ferromagnetic semiconductors for applications in spin electronics: State and outlook

Cited by 2 publications

References 51 publications

Competition between Electron–Phonon and Spin–Phonon Interaction on the Band Gap and Phonon Spectrum in Magnetic Semiconductors

Competition between Electron–Phonon and Spin–Phonon Interaction on the Band Gap and Phonon Spectrum in Magnetic Semiconductors

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

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