Development of fast short-circuit protection system for advanced IGBT

Ichiki, Mao; Arimoto, T.; Abe, Seiya; Tsukuda, Mamoru; Omura, Ichiro

doi:10.1016/j.microrel.2019.113408

Cited by 6 publications

(1 citation statement)

References 11 publications

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“…1,2 In addition to providing modules with current detection function by incorporating sense elements into semiconductor elements, there are other methods of current detection using shunt resistors, Rogowski coils, or CTs (Current Transformers). 3,4 Modules provided with current detection function require using IGBTs or MOS-FETs 5,6 equipped with respective sense elements. 7 The use of shunt resistors is advantageous in that current flowing in a module can be directly measured; however, main current flows in a shunt resistor, thus becoming yet another loss source, while inductance increases.…”

Section: Introductionmentioning

confidence: 99%

Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

Katoh

Nagasu

Suzuki

et al. 2021

Electrical Engineering Japan

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We are developing current-detection technology that directly measures the main current of a high-power semiconductor module using the wiring inductance of the module. In a previous study, we proposed a circuit that detects current by integrating the voltage generated in the wiring inductance between the sense emitter and emitter terminals of the IGBT (Insulated Gate Bipolar Transistor) module. In this study, we developed a total current detection scheme for parallelconnected modules. The basic principle of this scheme is that the total current can be obtained by the total of each voltage generated on the wiring inductance of each module. It was realized by using only one integrating circuit. A challenge for this study was avoiding reflection caused by impedance mismatch. We addressed this by adding a termination resistance with the same value as the characteristic impedance.

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