2015
DOI: 10.3389/fphy.2015.00012
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Development of electrostatic supercapacitors by atomic layer deposition on nanoporous anodic aluminum oxides for energy harvesting applications

Abstract: Citation:Iglesias L, Vega V, García J, Hernando B and Prida VM (2015) Development of electrostatic supercapacitors by atomic layer deposition on nanoporous anodic aluminum oxides for energy harvesting applications. The conformality of the deposited conductive and dielectric layers, together with their composition and crystalline structure have been checked by XRD and electron microscopy techniques. Impedance measurements performed for the optimized electrostatic supercapacitor device give a high capacitance … Show more

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Cited by 13 publications
(11 citation statements)
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“…Meanwhile, SiO 2 deposition, carried out at 150 • C, yielded a deposition rate of 0.06 nm/cycle, as previously reported [18,29]. For the double layered samples, schematized in Figure 1e, a SiO 2 layer was first deposited on the NPAS as described above; afterwards, the samples were coated with Al 2 O 3 or AZO with a layer thickness of about 3.5 nm, which were the corresponding growth rates of the Al 2 O 3 and AZO layers at 200 • C that had been previously studied by means of mechanical profilometry and ellipsometry measurements [32]. It is worth clarifying that the AZO layer consisted of a mixture of Zn and Al oxides obtained by performing 20 deposition cycles of ZnO, followed by one cycle of Al 2 O 3 , which corresponded to most of the external surface; through this approach, a doping of around 3% of Al in the ZnO layer was obtained [33,34].…”
Section: Npas Fabrication and Surfaces Coating By Atomic Layer Deposimentioning
confidence: 92%
“…Meanwhile, SiO 2 deposition, carried out at 150 • C, yielded a deposition rate of 0.06 nm/cycle, as previously reported [18,29]. For the double layered samples, schematized in Figure 1e, a SiO 2 layer was first deposited on the NPAS as described above; afterwards, the samples were coated with Al 2 O 3 or AZO with a layer thickness of about 3.5 nm, which were the corresponding growth rates of the Al 2 O 3 and AZO layers at 200 • C that had been previously studied by means of mechanical profilometry and ellipsometry measurements [32]. It is worth clarifying that the AZO layer consisted of a mixture of Zn and Al oxides obtained by performing 20 deposition cycles of ZnO, followed by one cycle of Al 2 O 3 , which corresponded to most of the external surface; through this approach, a doping of around 3% of Al in the ZnO layer was obtained [33,34].…”
Section: Npas Fabrication and Surfaces Coating By Atomic Layer Deposimentioning
confidence: 92%
“…More researches have been published on metal-insulator-metal capacitors using ALD [198][199][200][201]. More work on the application of ALD for capacitors has been done by different researchers looking at the growth rate, limitations and various applications on different materials [202][203][204][205][206][207]. Figure 8.…”
Section: Capacitorsmentioning
confidence: 99%
“…In recent years, several investigations based on nanotechnology have achieved important improvements in energy storage capacity of electrostatic capacitors [3,4]. Manufacturing of devices with high storage capacities and energy densities of up to 4 Wh/kg has been demonstrated [5,6], while maintaining the high power density characteristic of electrostatic capacitors.…”
Section: Introductionmentioning
confidence: 99%
“…This technique is also used to form supercapacitor devices over multiple substrates. There is a detailed study that applies ALD on NAAMs [4][5][6][7] in a very similar way to what was conducted in this work, developing new electrostatic supercapacitor devices, in which ALD becomes essential in the conformation of its electrodes and dielectric material. However, its range of application goes further, as ALD has been successfully used in recent years for electrochemical capacitor manufacturing over bundles of carbon nanotubes (CNT) [18,19], or TiO 2 nanoparticles [20].…”
Section: Introductionmentioning
confidence: 99%
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