Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials

Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku

doi:10.1149/1.1343106

Cited by 109 publications

(74 citation statements)

References 51 publications

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“…31 The value of DS for amorphous alloys would also include the contribution from increased configurational entropy, 31 suggesting that the variety of atomic configuration is a determining factor for DS and therefore D 0 as well. According to extensive studies on the atomic configuration of amorphous Al 2 O 3 , it is commonly accepted that amorphous Al 2 O 3 is composed of a majority of AlO 4 and AlO 5 basic units, and a minority of AlO 6 units. On the other hand, amorphous Ta 2 O 5 has a wider variety of basic units TaO x (x ¼ 3-7).…”

Section: B Oxygen Diffusionmentioning

confidence: 99%

“…There is growing interest in amorphous oxides for use as functional materials in a wide range of applications in the field of electrical, optical, chemical, and environmental engineering. For example, amorphous Al 2 O 3 (a-Al 2 O 3 ), a-Ta 2 O 5 , and a-Nb 2 O 5 are considered good coating materials for electrical, [1][2][3][4] biomedical, 5 and optical devices [6][7][8] because of their excellent dielectric, corrosion resistance, and reflective properties, respectively. For practical uses, the thermal stability of the layer is an important factor.…”

Section: Introductionmentioning

confidence: 99%

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Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Nakamura

Toda

Tsukui

et al. 2014

Journal of Applied Physics

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was investigated along with structural analysis in terms of pair distribution function (PDF). The low activation energy, $1.2 eV, for diffusion in the oxides suggests a single atomic jump of oxygen ions mediated via vacancy-like defects. However, the pre-exponential factor for a-Ta 2 O 5 and a-Nb 2 O 5 with lower bond energy was two orders of magnitude larger than that for a-Al 2 O 3 with higher bond energy. PDF analyses revealed that the short-range configuration in a-Ta 2 O 5 and a-Nb 2 O 5 was more broadly distributed than that in a-Al 2 O 3 . Due to the larger variety of atomic configurations of a-Ta 2 O 5 and a-Nb 2 O 5 , these oxides have a higher activation entropy for diffusion than a-Al 2 O 3 . The entropy term for diffusion associated with short-range structures was shown to be a dominant factor for diffusion in amorphous oxides. V C 2014 AIP Publishing LLC. [http://dx

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Section: B Oxygen Diffusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Nakamura

Toda

Tsukui

et al. 2014

Journal of Applied Physics

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show abstract

“…The resistivity of the coating can be customized by adjusting the ratio of the two species. 10 However, we found during testing that the film would undergo a slow breakdown and its resistivity would degrade in a matter of weeks under the high electrical field between the electrodes (up to 25 MV∕m). An alternative coating composed of nanoclusters of a conductive oxide (MoO 3−x ) embedded in a matrix of Al 2 O 3 was employed in its place.…”

Section: Overcoming Electrostatic Chargingmentioning

confidence: 93%

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

Grella

Carroll

Murray

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The digital pattern generator (DPG) is a complex electron-optical MEMS that pixelates the electron beam in the reflective electron beam lithography (REBL) e-beam column. It potentially enables massively parallel printing, which could make REBL competitive with optical lithography. The development of the REBL DPG, from the CMOS architecture, through the lenslet modeling and design, to the fabrication of the MEMS device, is described in detail. The imaging and printing results are also shown, which validate the pentode lenslet concept and the fabrication process.

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“…Tantalum pentoxide (Ta 2 O 5 ) has received considerable attention recently as a new generation of dielectrics to substitute SiO 2 in microelectronic devices because of its high dielectric constant (e.g., >20 depending on deposition conditions), and chemical and thermal stability. [ 33,34 ] Figure 1 illustrates the synthetic wileyonlinelibrary.com © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim route to the organic-inorganic hybrids, which includes the preparation of the telechelic P(VDF-CTFE) with hydroxyl terminal groups and subsequent sol-gel condensation with tantalum ethoxide (Ta(OCH 2 CH 3 ) 5 ).…”

Section: Synthesis and Structure Characterizationmentioning

confidence: 99%

A Hybrid Material Approach Toward Solution‐Processable Dielectrics Exhibiting Enhanced Breakdown Strength and High Energy Density

Han

Chanthad

et al. 2015

Adv Funct Materials

158

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3505wileyonlinelibrary.com dielectric capacitors possess higher power density, faster charge-discharge capability, and longer lifetime, [ 3,4 ] but bear energy densities that are one order of magnitude lower than those of batteries. [ 5 ] As the energy density of capacitors is governed by the dielectric materials that separate the opposite static charges between two electrodes, the development of dielectric materials with greatly improved energy density is thus becoming one of the major enabling technologies. [ 6 ] In general, the energy density ( U e ) of linear dielectric materials is given by U e = ½ ε r ε 0 E 2 , where ε r is the effective permittivity, ε 0 is the vacuum permittivity, and E is the applied fi eld. Inorganic dielectric materials, while enjoying high dielectric permittivities, are limited by low breakdown strength ( E b ), i.e., typically in the scale of kV m ), and graceful failure mechanism, although their permittivities are orders of magnitude smaller than those of their inorganic counterparts. [ 7,8 ] To integrate the complementary advantages of inorganic and organic dielectric materials, polymer nanocomposites composed of inorganic ceramic fi llers with high dielectric constant ( k ) have been prepared by using a variety of methods, including mechanical blending, [ 9,10 ] solution mixing, [11][12][13][14][15] and surface-initiated polymerization. [ 16,17 ] As expected, k values of the polymer nanocomposites have indeed been improved, but there exist serious drawbacks in the nanocomposite approach. (1) The presence of a large contrast in k values between two phases augments the local electric fi eld distortions and results in a highly inhomogeneous fi eld distribution, and consequently, decreases E b . [ 4 ] As U e of dielectrics scales as the second power of the applied electric fi eld, a reduced E b would diminish any substantial improvement in energy storage capability even though k is increased. (2) The structural imperfections at the fi ller/ matrix interface such as fl aws and voids caused by the poor fi ller distribution and incompatibility between the inorganic and organic phases not only are detrimental to E b , but also give rise to large conduction loss. This, in turn, reduces the discharged energy density and shortens the lifetime of devices because of Joule heating. A Hybrid Material Approach Toward Solution-Processable Dielectrics Exhibiting Enhanced Breakdown Strength and High Energy DensityKuo Han , Qi Li , Chalathorn Chanthad , Matthew R. Gadinski , Guangzu Zhang , and Qing Wang * The ever-increasing demand for compact electronics and electrical power systems cannot be met with conventional dielectric materials with limited energy densities. Numerous efforts have been made to improve the energy densities of dielectrics by incorporating ceramic additives into polymer matrix. In spite of increased permittivities, thus-fabricated polymer nanocomposites typically suffer from signifi cantly decreased breakdown strengths, which preclude a substantial gain in energy density. Here...

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Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials

Cited by 109 publications

References 51 publications

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

A Hybrid Material Approach Toward Solution‐Processable Dielectrics Exhibiting Enhanced Breakdown Strength and High Energy Density

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