Development of Cu2ZnSnS4 films from a non-toxic molecular precursor ink and theoretical investigation of device performance using experimental outcomes

Mora-Herrera, D.; Silva‐González, R.; Cancino-Gordillo, Francisco Enrique; Pal, Mou

doi:10.1016/j.solener.2020.01.077

Cited by 20 publications

(3 citation statements)

References 48 publications

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“…The key elements of a growing process through a physical method include a high-vacuum deposition chamber which holds the bulk parent raw material, also called the target, from which the constituent atoms or molecules are released as a vapor stream, and the deposition substrate on which the vapor stream collides, leading to the growth of a layer with the same stoichiometric composition as the parent material. Several vacuum-based approaches of synthesizing kesterite CZTS absorbers have been reported in the literature, such as thermal evaporation, sputtering, and pulsed layer deposition [ 49 ].…”

Section: Processing Technologies For Thin Kesterite Czts Absorber Filmsmentioning

confidence: 99%

Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review

Boerasu

Vasile

2022

Materials

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Herein, based on the reviewed literature, the current marketability challenges faced by kesterite CZTS based-solar cells is addressed. A knowledge update about the attempts to reduce the open circuit voltage deficit of kesterite CZTS solar cells will be addressed, with a focus on the impact of Cu/Zn order/disorder and of Se doping. This review also presents the strengths and weaknesses of the most commercially attractive synthesis methods for synthesizing thin kesterite CZTS films for photovoltaic applications.

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Section: Processing Technologies For Thin Kesterite Czts Absorber Filmsmentioning

confidence: 99%

Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review

Boerasu

Vasile

2022

Materials

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“…According to the Mott criterion, the maximum carrier concentration limit of CZTS is 10 18 cm −3 . Beyond this, it degenerates and loses its semiconducting property, adversely affecting the J SC of solar cells 99 . Thus, taking insights from the parent material, the carrier concentration of Ag 2 BaTiSe 4 is varied from 10 12 to 10 18 cm −3 in all solar cells.…”

Section: Resultsmentioning

confidence: 99%

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Arockiya Dass,

Hossain,

Marasamy

2024

Sci Rep

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Cu2ZnSn(S,Se)4 is a non-toxic, earth-abundant photovoltaic absorber. However, its efficiency is limited by a large open circuit voltage (VOC) deficit occurring due to its antisite defects and improper band alignment with toxic CdS buffer. Therefore, finding an absorber and non-toxic buffers that reduce VOC deficit is crucial. Herein, for the first time, Ag2BaTiSe4 is proposed as an alternative absorber using SCAPS-1D wherein a new class of alkaline earth metal chalcogenide such as MgS, CaS, SrS, and BaS is applied as buffers, and their characteristics are compared with CdS to identify their potential and suitability. The buffer and absorber properties are elucidated by tuning their thickness, carrier concentration, and defect density. Interestingly, optimization of the buffer’s carrier concentration suppressed the barrier height and accumulation of charge carriers at the absorber/buffer interface, leading to efficiencies of 18.81%, 17.17%, 20.6%, 20.85%, 20.08% in MgS, CaS, SrS, BaS, and CdS-based solar cells respectively. Upon optimizing Ag2BaTiSe4, MoSe2, and interface defects maximum efficiency of > 28% is achieved with less VOC loss (~ 0.3 V) in all solar cells at absorber’s thickness, carrier concentration, and defect density of 1 µm, 1018 cm−3, 1015 cm−3 respectively, underscoring the promising nature of Ag2BaTiSe4 absorber and new alkaline earth metal chalcogenide buffers in photovoltaics.

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“…In addition Cu 2 ZnSnS 4 has a wider range of possible defects depending on its growing conditions and variations in stoichiometry, most of the anti-sites Cu Zn , Sn Zn , and Zn Sn ) [7], theses defect influence negatively on the efficiency of CZTS solar cells. Effectively, the studies of semiconductors absorbers are separated in two major axes: Firstly the improve of CZTS thin film in solar cell for photovoltaic application [8], and secondly the amelioration of solar cell performances using a novel approach that has entice serious intension in 2020 from some research investigations is the substitution Zn 2+ by other elements has similar valence electronic including: Mn 2+ , Mg 2+ , Fe 2+ , Co 2+ , Ba 2+ , Ni 2+ these research lead to develop the novel low cost semiconductors absorbers layers [9][10][11][12][13][14]. These quaternaries can be used in various applications such as: photolysis, sensors, thermoelectricitys, batteries, spintronics and photovoltaics.…”

Section: Introductionmentioning

confidence: 99%

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Ziti

Hartiti

Belafhaili

et al. 2021

J Mater Sci: Mater Electron

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Quaternary semiconductor Cu 2 NiSnS 4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu 2 NiSnS 4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented.Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm -1 . EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 10 4 cm -1 , Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω. cm) −1 . These characteristics are suitable for solar cells applications.

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Development of Cu2ZnSnS4 films from a non-toxic molecular precursor ink and theoretical investigation of device performance using experimental outcomes

Cited by 20 publications

References 48 publications

Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review

Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

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