Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

Zhang, C.L.; Xu, Bo; Wang, Z.G.; Jin, Peng; Zhao, Feiyan

doi:10.1016/j.physe.2004.09.008

Cited by 10 publications

(5 citation statements)

References 13 publications

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“…1 leads us to conclude that QDs nucleate on top of the cross-hatch pattern. A result which differs in one important aspect from those obtained by Zhang et al who formed similar VS but obtained QDs along the side of the cross-hatch pattern [6]. We note that while Zhang et al introduced 30-s GI time after the formation of the InGaAs layer and none after QD formation, we introduce a 2-min GI time after the formation of the In GaAs layer and an additional 30-s GI time after QD formation for the QD hatches sample shown in Fig.…”

Section: Resultscontrasting

confidence: 98%

“…The bottom-up approach, on the other hand, grows SK QDs on substrates which already have some surface structures; for examples, high-index substrates [3] and atomically smooth surfaces which undergo in situ processing, such as the formation of striped-or strain-engineered superlattice templates [4,5]. One recent approach is the use of virtual substrates (VS) where a lattice-mismatched layer is partially relaxed and used as a template on which connected QDs are grown [6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

Thet

Panyakeow

Kanjanachuchai

2007

Microelectronic Engineering

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Section: Resultscontrasting

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

Thet

Panyakeow

Kanjanachuchai

2007

Microelectronic Engineering

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“…This dependence has been previously reported only for the x ¼ 0.15 case, although no clear explanation for this effect has been put forward. 29 From a physical point of view of the growth process, the most obvious explanation relies on the fact that the driving force for the nucleation of 3D islands is the relief of the strain energy which builds up as the thickness of the compressively strained InAs 2D layer increases. When this energy reaches a critical value, to which a critical InAs thickness can be associated, it becomes energetically favorable to have a 3D growth front where the island lattice parameter may continuously relax along the growth direction.…”

Section: Resultsmentioning

confidence: 99%

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Seravalli¹,

Trevisi²,

Frigeri³

2012

CrystEngComm

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We study the growth by Molecular Beam Epitaxy of InAs quantum dots (QDs) on InGaAs metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs and MBs (7.2% > f > 4.5%) and the In content x of the surface underlying QDs (0 # x # 0.35), taking advantage of the dependence of MB strain relaxation on MB thickness. AFM characterization indicated an enlargement of QD diameters for x $ 0.35, while changing f had negligible effects. The twodimensional (2D) to three-dimensional (3D) critical thickness q c was measured by RHEED: for fixed x, q c increases with reducing f due to the reduction of the elastic energy of the 2D InAs wetting layer (WL), in agreement with literature model predictions. For fixed f, q c reduces with increasing x, an effect not reported so far that we discuss in terms of: (i) enhanced surface diffusion of In atoms on In-richer surfaces and (ii) In-richer WLs in the picture of 2D-3D transition due to In segregation in WLs. These results indicate that metamorphic QDs provide interesting possibilities to control structure properties and can be a model system to investigate the physical mechanisms of the 2D-3D transition.

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“…However, according to Ref. [ 4 ], 50 nm is a sufficient layer thickness to produce a MD network in a Ga 0.85 In 0.15 As layer grown at 520°C. Based on similar surface morphologies (Fig.…”

Section: Resultsmentioning

confidence: 99%

Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

et al. 2010

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We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.

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Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

Cited by 10 publications

References 13 publications

Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

Growth of InAs quantum-dot hatches on InGaAs/GaAs cross-hatch virtual substrates

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

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