Development of APCVD process for high quality TCO

Deelen, J. van; Mol, Ton van; Poodt, Paul; Grob, F.; Spee, Karel

doi:10.1109/pvsc.2009.5411680

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2012

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“…In the case of APCVD, various kinds of precursor materials have been used such as tetramethyltin (TMT), monobutyltinchloride (MBTC), and tin tetrachloride (TTC). 21,24) Among these materials, TTC has the highest mobility (60 cm 2 V À1 s À1 ) reported. 23) Compared with APCVD, LPCVD can be used to deposit films with high purity.…”

Section: Introductionmentioning

confidence: 99%

Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Isshiki

Ikeda

Okubo

et al. 2012

Jpn. J. Appl. Phys.

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High mobility is required to suppress free-carrier absorption in the near-infrared (NIR) region. Toward this end, we investigated the properties of a F-doped SnO2 (FTO) film deposited using low-pressure chemical vapor deposition (LPCVD) and found that the optimum deposition temperature varied with film thickness. On the basis of this result, we introduced a temperature gradient into LPCVD, which resulted in an improvement in the mobility of F-doped SnO2 on glass to 77.5 cm2 V-1 s-1.

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Section: Introductionmentioning

confidence: 99%

Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Isshiki

Ikeda

Okubo

et al. 2012

Jpn. J. Appl. Phys.

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Development of APCVD process for high quality TCO

Cited by 1 publication

References 17 publications

Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

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Development of APCVD process for high quality TCO

Cited by 1 publication

References 17 publications

Improving Mobility of F-Doped SnO2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Improving Mobility of F-Doped SnO2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

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Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition