Short-Wavelength Radiation Sources 1991
DOI: 10.1117/12.50602
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Development of an XUV-IR free-electron laser user facility for scientific research and industrial applications

Abstract: Byacceptance (dthis a_le thepublisher r_ that theU.S. G_em_ rmimano_mdu,fce, royalty-trR license to_ o_r_ the published _ (dthis ¢omtr_ution ortoaJtow othmto doso, forU.S. _ puq:o=_ The Los/gam_ Nalioml _ory requests thai thepublisher identify this_ u work I_w_'med undw It__ d theU.S. D_artmmt d Energy

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Cited by 2 publications
(2 citation statements)
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“…To maintain high reflectivity, contamination must be minimized since capping layers typically used above 125 nm such as MgF 2become highly absorbing at shorter wavelengths. In situ cleaning techniques [6,7], and occasional recoating of optics will almost certainly be required [8]. These problems, familiar to designers of XUV optics [8,9], will be shared by essentially all of the optical elements utilized in the beamlines for the UV-FEL.…”
Section: Optics Design"mentioning
confidence: 99%
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“…To maintain high reflectivity, contamination must be minimized since capping layers typically used above 125 nm such as MgF 2become highly absorbing at shorter wavelengths. In situ cleaning techniques [6,7], and occasional recoating of optics will almost certainly be required [8]. These problems, familiar to designers of XUV optics [8,9], will be shared by essentially all of the optical elements utilized in the beamlines for the UV-FEL.…”
Section: Optics Design"mentioning
confidence: 99%
“…The system must also provide the highest possible transmission. This can be achieved by providing a choice of either multifacet total external reflection geometry [8,11,12] for short wavelength operation, or a 45 degree reflection geometry to minimize the number of reflections for longer wavelengths.…”
Section: Optics Design"mentioning
confidence: 99%