Development of an improved performance SiGe unicouple

Nakahara, J. F.; Franklin, B. J.; DeFillipo, Lawrence E.

doi:10.1063/1.47119

Cited by 8 publications

(11 citation statements)

References 2 publications

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“…Experiments were also designed to measure the power output from both conventional and pn‐junction TEG under similar conditions such as material, metallization and temperature gradient. It was found to be comparable, provided the cross doping due to electromigration need to be addressed [154] …”

Section: Structural Design Of Thermoelectric Devicesmentioning

confidence: 99%

“…Although, this concept of device is scarce, few instances are present where the array of pn-junctions were used. [78,[150][151][152][153][154] Fabrication of directly bonded p-and n-type materials were realized using polycrystalline FeSi 2 which facilitates the operation of the devices at high temperature and in oxidizing environment. [155] These devices possess U-shaped geometry (Figure 15B) and FeSi 2 at elevated temperature makes a metallic bonding between the n-and p-type materials.…”

Section: Bulk Tegs Employing Pn-junction At the Hot Sidementioning

confidence: 99%

“…It was found to be comparable, provided the cross doping due to electromigration need to be addressed. [154]…”

Section: Bulk Tegs Employing Pn-junction At the Hot Sidementioning

confidence: 99%

“…Although, this concept of device is scarce, few instances are present where the array of pn‐junctions were used [78,150–154] . Fabrication of directly bonded p‐ and n‐type materials were realized using polycrystalline FeSi 2 which facilitates the operation of the devices at high temperature and in oxidizing environment [155] .…”

Section: Structural Design Of Thermoelectric Devicesmentioning

confidence: 99%

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Thermoelectric Modules: Key Issues in Architectural Design and Contact Optimization

Basu

2023

ChemNanoMat

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Interplay between the phonons and electrons makes thermoelectric engineering enigmatic.In recent years, substantial improvement in the performance of thermoelectric materials has drawn considerable attention in experimenting their prospective applications in the thermoelectric technology. It serves as a bond between the thermoelectric alloys/materials and the modules/devices and so needs to be meticulously planned, engineered and integrated to gratify the performance of the thermoelectric products either for cooling or power generation. Here, the principle of thermo-electricity has been discussed along with the different feasible architectures and synthesis methodologies. In addition, the review also discusses the role of contact engineering, as the reliability of the thermoelectric devices depends on the overall assemblage. Moreover, thermoelectric applications are limited to niche markets wherever the need of reliability surpasses the requirement of conversion efficiency. Thus, contact issues which includes thermomechanical stresses at the interface, bonding strength and resistance at the interface are also discussed.

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Section: Structural Design Of Thermoelectric Devicesmentioning

confidence: 99%

Section: Bulk Tegs Employing Pn-junction At the Hot Sidementioning

confidence: 99%

“…It was found to be comparable, provided the cross doping due to electromigration need to be addressed. [154]…”

Section: Bulk Tegs Employing Pn-junction At the Hot Sidementioning

confidence: 99%

Section: Structural Design Of Thermoelectric Devicesmentioning

confidence: 99%

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Thermoelectric Modules: Key Issues in Architectural Design and Contact Optimization

Basu

2023

ChemNanoMat

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“…In addition to these compositional changes, the use of mechanical alloying has been shown to be a viable method of preparing large, production-scale compacts. In order to more accurately predict the performance that can be realized with these materials in an actual converter, the materials will be used to fabricate unicouples, eighteen of which will then be assembled into a small-scale test module to compare with previous results (Kelly 1994 andNakahara 1995).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of improved sige alloys for an 18-couple module test

Loughin¹,

Nakahara²,

Centurioni³

et al. 1995

AIP Conference Proceedings

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N-and p-type Sio.78Geo.22 alloys were fabricated to determine if recently reported improvements in the figure-ofmerit, Z, could be realized in devices. These will be tested in an 18-couple module to directly compare the performance of these materials with that of standard coarse-grain SiGe used in flight programs. We describe the synthesis by vacuum casting and hot pressing p-type SiGe and mechanical alloying and hot-isostatic pressing n-type SiGe. Improved materials and standard materials are characterized and compared. The integrated average figures-ofmerit (573-1273 K) of the improved materials were Z^ = 0.59x10-3 K'^ and Z^ =0.85x10-3 K-^ compared with Z^"^ = 0.52x10-3 K-^ and Z;;" = 0.76x10-3 K-^ for the standard materials. We also report the power factors for improved and standard materials removed from fabricated devices to gain insight as to how subsequent processing impacts performance.

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Enhancing thermoelectric properties of p-type SiGe by SiMo addition

Han

Xiang

et al. 2019

J Mater Sci: Mater Electron

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Development of an improved performance SiGe unicouple

Cited by 8 publications

References 2 publications

Thermoelectric Modules: Key Issues in Architectural Design and Contact Optimization

Thermoelectric Modules: Key Issues in Architectural Design and Contact Optimization

Fabrication of improved sige alloys for an 18-couple module test

Enhancing thermoelectric properties of p-type SiGe by SiMo addition

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