Development of amorphous silicon-based thin-film solar cells with low-temperature coefficient

Sriprapha, Kobsak; Inthisang, Sorapong; Myong, Seung Yeop; Miyajima, Shinsuke; Yamada, Akira; Sichanugrist, Porponth; Konagai, Makoto

doi:10.1117/12.792521

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…The multijunction silicon-based thin film solar cells are attractive candidates for further low-cost and highly efficient solar cells. The development of thin film silicon solar cells which were suitable to use in tropical climate region has been reported by our group [1][2][3]. Therefore, the optimization of single-junction a-Si:H solar cells is necessary to obtain higher efficiency in amorphous silicon oxide/amorphous silicon (a-SiO:H/a-Si:H) or in amorphous silicon/microcrystalline silicon (a-Si:H/ c-Si:H) tandem cells.…”

Section: Introductionmentioning

confidence: 99%

Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorp

Krajangsang

Inthisang

Hongsingthong

et al. 2013

International Journal of Photoenergy

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Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4ratio and H2/SiH4dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells.

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Section: Introductionmentioning

confidence: 99%

Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorp

Krajangsang

Inthisang

Hongsingthong

et al. 2013

International Journal of Photoenergy

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Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells

et al. 2016

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Temperature dependence of hydrogenated amorphous silicon solar cell performances

Riesen

Stückelberger

Haug

et al. 2016

Journal of Applied Physics

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Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (Pmpp), the fill factor (FF), the short-circuit current density (Jsc), and the open-circuit voltage (Voc) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the Voc generally varies linearly with the Voc value. The Jsc increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 °C and 80 °C. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the Pmpp (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the Pmpp (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchâtel (Switzerland) the best cell at STC also has the best energy yield. However, for a different climate or cell configuration, this may not be true.

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Development of amorphous silicon-based thin-film solar cells with low-temperature coefficient

Cited by 3 publications

References 24 publications

Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorp

Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorp

Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells

Temperature dependence of hydrogenated amorphous silicon solar cell performances

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