Development of Advanced Substrates for HTS Coated Conductors

Suo, Hong Li; Gao, Mangmang; Zhao, Yutao; Zhu, Yong; Gao, Pei; Wang, Jian Hong; Liu, Min; Ma, Lin; Yuan, Jun

doi:10.1109/tasc.2010.2044779

Cited by 8 publications

(3 citation statements)

References 15 publications

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“…Practical superconductors have to be thermally stabilized and therefore highly conductive components (e.g. Cu) should be protected against the chemical reaction with MgB 2 filaments by a metallic layer (diffusion barrier) [1,2]. Up to now, niobium has been the most widely used barrier material separating in situ made MgB 2 filaments from Cu stabilization [3,4].…”

Section: Introductionmentioning

confidence: 99%

Superconducting MgB₂wires with vanadium diffusion barrier

Hušek¹,

Kòváč²,

Melíšek³

et al. 2017

Supercond. Sci. Technol.

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Single-core MgB2 wires with a vanadium barrier and Cu stabilization have been made by the in situ powder-in-tube (PIT) and internal magnesium diffusion (IMD) into boron processes. Heat treatment of PIT wires was done at the temperature range of 650 °C–850 °C/30 min. Critical currents of differently treated MgB2/V/Cu wires have been measured and related with the structure of MgB2. It was found that critical current density of MgB2/V wire annealed above 700 °C decreases rapidly. The obtained results clearly show that vanadium is a well formable metal and can be applied as an effective diffusion barrier for MgB2 wires heat-treated at temperatures ≤700 °C. This temperature limit is well applicable for MgB2 wires with high current densities made by PIT and also by the IMD process.

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Section: Introductionmentioning

confidence: 99%

Superconducting MgB₂wires with vanadium diffusion barrier

Hušek¹,

Kòváč²,

Melíšek³

et al. 2017

Supercond. Sci. Technol.

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“…The thermal stability of metal foils meets the requirement for the crystallization of oxide thin films. In contrast, metal foils have relatively high roughness [72,[84][85][86]. Because metal foils are produced by pressing metal ingots and then elongating them in a reel system, the roughness of the product is highly dependent on the smoothness of the reel and the subsequent polishing processes and is rarely <100 nm.…”

Section: Flexible Substratesmentioning

confidence: 99%

“…Because metal foils are produced by pressing metal ingots and then elongating them in a reel system, the roughness of the product is highly dependent on the smoothness of the reel and the subsequent polishing processes and is rarely <100 nm. Therefore, an additional planarization oxide coating becomes necessary for decreasing roughness before the growth of semiconductor layers, which undoubtedly increases the complexity of the use of metal foils [35,84]. In contrast, by applying ionbeam-assisted deposition (IBAD), the coated oxide planarization layer can be crystallized along a preferred orientation [87,88].…”

Section: Flexible Substratesmentioning

confidence: 99%

Flexible gallium oxide electronics

Tang

2023

Semicond. Sci. Technol.

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Flexible Ga2O3 devices are becoming increasingly important in the world of electronic products due to their unique properties. As a semiconductor, Ga2O3 has a much higher bandgap, breakdown electric field, and dielectric constant than silicon, making it a great choice for next-generation semiconductor materials. In addition, Ga2O3 is a particularly robust material that can withstand a wide range of temperatures and pressure levels, thus is ideal for harsh environments such as space or extreme temperatures. Finally, its superior electron transport properties enable higher levels of electrical switching speed than traditional semiconducting materials. Endowing Ga2O3-based devices with good mechanical robustness and flexibility is crucial to make them suitable for use in applications such as wearable electronics, implantable electronics, and automotive electronicsHowever, as a typical ceramic material, Ga2O3 is intrinsically brittle and requires high temperatures for its crystallization. Therefore fabricating flexible Ga2O3 devices is not a straightforward task by directly utilizing the commonly used polymer substrates. In this context, in recent years people have developed several fabrication routes, which are the transfer route, in situ room-temperature amorphous route, and in situ high-temperature epitaxy route. In this review, we discuss the advantages and limitations of each technique and evaluate the opportunities for and challenges in realizing the applications of flexible Ga2O3 devices.

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