2008
DOI: 10.1063/1.2835901
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Development of a vacuum ultraviolet laser-based angle-resolved photoemission system with a superhigh energy resolution better than 1meV

Abstract: The design and performance of the first vacuum ultra-violet (VUV) laser-based angle-resolved photoemission (ARPES) system are described. The VUV laser with a photon energy of 6.994 eV and bandwidth of 0.26 meV is achieved from the second harmonic generation using a novel nonlinear optical crystal KBe 2 BO 3 F 2 (KBBF). The new VUV laser-based ARPES system exhibits superior performance, including super-high energy resolution better than 1 meV, high momentum resolution, super-high photon flux and much enhanced b… Show more

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Cited by 218 publications
(165 citation statements)
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“…To observe the note-shaped pattern that signals the chiral anomaly it is essential that the induced chemical potential difference δμ is larger than the energy resolution of the experiments, which is of the order of ∼meV [72] Table I as measured by ARPES for Na 3 Bi and Cd 3 As 2 . From Eq.…”
Section: Estimates Of the Chiral Chemical Potential Differencementioning
confidence: 99%
“…To observe the note-shaped pattern that signals the chiral anomaly it is essential that the induced chemical potential difference δμ is larger than the energy resolution of the experiments, which is of the order of ∼meV [72] Table I as measured by ARPES for Na 3 Bi and Cd 3 As 2 . From Eq.…”
Section: Estimates Of the Chiral Chemical Potential Differencementioning
confidence: 99%
“…These finite widths represent the small chance that electrons interacting with the medium, primarily through electron-hole pair creation and plasmonic interaction, will have energy within the final-state gap. Typically, this final-state effect in ARPES is not used to measure unoccupied states, which are instead mapped by inverse photoemission[8] or very-low-energy electron diffraction [5,[9][10][11][12].Here we show that laser-based ARPES [13][14][15], under certain conditions, can be used to map final-state gaps in the electronic states of a material. This method provides the following advantages with respect to standard synchrotron-based ARPES: (a) improved momentum resolution and greater bulk sensitivity, due to the lower photon energy range available in laser-ARPES (6-7 eV)[13], * alanzara@lbl.gov and (b) access to unoccupied electron states closer to the Fermi level.…”
mentioning
confidence: 99%
“…It has established a universality of the nodal kink in both electron-and hole-doped cuprate superconductors. It also suggests that the different behaviors between electronand hole-doped cuprates may not be dictated by the nodal electron coupling, but by their distinct doping-dependent electronic structure.The angle-resolved photoemission measurements were performed on our recently developed vacuum ultra-violet (VUV) laser-based ARPES system at the Institute of Physics, Chinese Academy of Sciences, which has some unique advantages such as super-high energy resolution (better than 1 meV), high momentum resolution, super-high photon flux and enhanced bulk sensitivity [15]. The photon energy of the VUV laser is 6.994 eV with a bandwidth of 0.26 meV.…”
mentioning
confidence: 99%
“…The angle-resolved photoemission measurements were performed on our recently developed vacuum ultra-violet (VUV) laser-based ARPES system at the Institute of Physics, Chinese Academy of Sciences, which has some unique advantages such as super-high energy resolution (better than 1 meV), high momentum resolution, super-high photon flux and enhanced bulk sensitivity [15]. The photon energy of the VUV laser is 6.994 eV with a bandwidth of 0.26 meV.…”
mentioning
confidence: 99%