Development of a universal stress sensor for graphene and carbon fibres

Frank, Otakar; Tsoukleri, Georgia; Riaz, Ibtsam; Papagelis, Konstantinos; Parthenios, John; Ferrari, Andrea C.; Geǐm, A. K.; Новоселов, К. С.; Galiotis, Costas

doi:10.1038/ncomms1247

Cited by 186 publications

(164 citation statements)

References 45 publications

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“…The splitting of G peak implies that the degeneracy of iLO and iTO phonon branches is lifted, further supporting the model of lattice reconstruction in graphene. A similar behavior of Raman G peak splitting has been observed in graphene under uniaxial strains, in which lattice deformations are generated 20,21 . As one of the direct consequence of CDW phase transitions, lattice reconstructions should be observed when cooling down graphene EDLTs 8 .…”

Section: Cdw Phase Transitions Near Vhsssupporting

confidence: 72%

Charge density wave phase transition on the surface of electrostatically doped multilayer graphene

Long

Zhang

et al. 2016

Applied Physics Letters

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2According to the band structure of graphene, the density of state (DOS) diverges at the M points in the first Brillouin zone (BZ). These points are known as van Hove Singularities (VHSs) 1 .When the Fermi energy EF is approaching to the VHSs, the DOS divergence may lead to system instabilities and phase transitions 2, 3 . Low-energy states such as charge density waves (CDW) may occur. The VHS features in Ca-intercalated few-layer graphene 4, 5 , artificially twisted bilayer graphene 2 and high-quality single layer graphene under a high magnetic field 6 have been studied theoretically and/or experimentally. However, the possibility of CDW phase transitions that involve VHSs in electrostatically doped graphene has been a subject of considerable debate since the discovery of graphene because extremely large doping concentrations are difficult to achieve to tune the Fermi level of graphene to VHSs.To effectively tune the Fermi level of graphene, we fabricate multilayer graphene field-effect double-layer transistors (EDLTs) biased through ionic liquid gating. A high density of charge carriers are effectively introduced into graphene via electric double layers formed at the interface between the ionic liquid and the topmost graphene surface 7 . Once the Fermi level of graphene is tuned to the VHSs by the ionic liquid gating, a sudden increase of the graphene channel resistance is repeatedly detected at about 100K, similar to the features of CDW phase transitions 8 . Evidently, the splitting of the Raman G peak further demonstrates the lattice reconstructions, which is associated with the CDW phase transitions when the sample temperature is below the critical point (Tm=100K) while the Fermi energy is close to VHSs 8 ， 9 . Graphene electric double-layer transistors (EDLTs)EDLT devices are chosen to achieve the CDW phase transition through effective tuning of the Fermi energy of graphene to the VHSs electrostatically (Supplementary Materials). Hall devices 3 with side gate electrodes are fabricated using standard electron beam lithography (see the inset in Fig.1(b)). A droplet of ionic liquid (DEME-TFSI) is applied onto the surface of graphene channel and the side gate electrodes (Section 1, Supplementary Materials). Under a positive (or negative) bias voltage at room temperature, cations (or anions) from the ionic liquid are derived onto the surface of graphene channel ( Fig.1(a)). The inducing carrier efficiency (estimated based on the equivalent capacitance) is ~5.23  10 13 cm -2 V -1 by evaluating the Hall effect of the devices ( Fig. 1(c)). The gating efficiency of the ionic liquid is approximately two orders of magnitude higher than that of widely used 300 nm-thick SiO2 (~10 11 cm -2 V -1 ). Importantly, the carrier density linearly depends on the gate voltage ( Fig.1(c)) and does not depend on the thickness of graphene samples. Therefore, the gate voltage dependence of carrier density can be estimated expediently and accurately.  denotes the dielectric constant 13 . For quantitative estimation, we take DOS=0...

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Section: Cdw Phase Transitions Near Vhsssupporting

confidence: 72%

Charge density wave phase transition on the surface of electrostatically doped multilayer graphene

Long

Zhang

et al. 2016

Applied Physics Letters

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“…The behavior of the D band for varying laser wavelength is consistent with a hypothesis that subpopulations of phonons scatter different incident photons with different wavelengths [25][26][27]. The G peak significantly shifts due to applied pressure and strain [28,31].…”

Section: Micromorphology and Raman Spectrasupporting

confidence: 84%

“…For all the known active carbon, their Raman spectra showed the common feature of two peaks (G and D) in the 800-2000 cm −1 region. The G and D peaks lie at around 1595 and 1345 cm −1 , respectively [24][25][26][27][28][29][30][31][32][33], and they are typical characteristics of graphitic carbon materials. The G peak corresponds to the E 2g phonon at the Brillouin zone center, which comes from highly ordered sp 2 carbon in plane.…”

Section: Micromorphology and Raman Spectramentioning

confidence: 99%

Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

Zeng

Shrestha

Wang

et al. 2017

Journal of Nanomaterials

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The plasma treatment on commercial active carbon (AC) was carried out in a capacitively coupled plasma system using Ar + 10% O 2 at pressure of 4.0 Torr. The RF plasma power ranged from 50 W to 100 W and the processing time was 10 min. The carbon film electrode was fabricated by electrophoretic deposition. Micro-Raman spectroscopy revealed the highly increased disorder of sp 2 C lattice for the AC treated at 75 W. An electrosorption capacity of 6.15 mg/g was recorded for the carbon treated at 75 W in a 0.1 mM NaCl solution when 1.5 V was applied for 5 hours, while the capacity of the untreated AC was 1.01 mg/g. The plasma treatment led to 5.09 times increase in the absorption capacity. The jump of electrosorption capacity by plasma treatment was consistent with the Raman spectra and electrochemical double layer capacitance. This work demonstrated that plasma treatment was a potentially efficient approach to activating biochar to serve as electrode material for capacitive deionization (CDI).

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“…(partial prismatic edge dislocation, perpendicular to basal layers) where c = 0.667 nm [42]. The piezo-spectroscopic coefficients required for the model are taken from the reference [43] and derived from stress sensitivity experiments in two-dimensional carbon materials using the Raman G-peak:  a = 3.5 cm . Figure 3 shows that in using the property values listed above, a reasonable dislocation density can be estimated based on the Raman G-peak broadening.…”

Section: Raman Mapping Area Spectroscopymentioning

confidence: 99%

An understanding of lattice strain, defects and disorder in nuclear graphite

Krishna¹,

Wade²,

Jones³

et al. 2017

Carbon

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In this study, microstructural parameters, such as lattice dimension, micro-strain and dislocation density, of different neutron-irradiated graphite grades have been evaluated using the diffraction profiles of X-ray diffraction (XRD) and the scattering profiles of Raman spectroscopy. Using Gen-IV candidate graphite samples (grade PCEA, GrafTech), subjected to neutron irradiation at 900°C to 6.6 and 10.2 dpa, and graphite samples of similar grain size and microstructure taken from the core of the British Experimental Pile Zero reactor, which have been irradiated at 100-120 °C to 1.60 dpa, an investigation on the effect of irradiation dose and temperature on the aforementioned microstructural parameters is

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Development of a universal stress sensor for graphene and carbon fibres

Cited by 186 publications

References 45 publications

Charge density wave phase transition on the surface of electrostatically doped multilayer graphene

Charge density wave phase transition on the surface of electrostatically doped multilayer graphene

Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

An understanding of lattice strain, defects and disorder in nuclear graphite

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