Development of a semiconductor switch for high power copper vapor lasers

An impulse power supply has been designed, simulated, and tested in order to feed the primary of a high-frequency transformer. Pulse power system has been widely used for plasma applications. The operational principle of the pulse power system is that the energy from the input source is stored in the capacitor bank device through a dc-dc converter. Then, when a discharging signal is given, the stored energy is released to the load. The new family of ZCS converters is suitable for high-power applications using insulated gate bipolar transistors (IGBTs). The power converter can achieve zero switching with the aid of high-frequency transformer. The device is capable of charging a 0.1 μF capacitor up to 5 kV which accounts for a charging power of 5 kJ/s. The novel control algorithm is achieved which eminently considers the nonlinear control characteristics of impulse power supply. The required charging voltage, together with the constraint on the charging time, translates into a required maximum power of 10 kW reduced in this initial version to 5 kW. The difficulty to reliably control such a power at the high-voltage side practically forbids any approach featuring a more or less stabilized DC high-voltage to be generated from a conventional 50 Hz transformer through rectification.

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“…C eq is the series combination of capacitors C and C c , where C c is the equivalent capacitance C c reflected in the primary [5][6][7][8]…”

Section: Theory Of Operationmentioning

confidence: 99%

FFT Analysis of a Series Loaded Resonant Converter-Based Power Supply for Pulsed Power Applications

Jadeja

Kanitkar

Shyam

2008

International Journal of Plasma Science and Engineering

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“…However, it has a drawback in life-time, reliability, and its handling. To replace a thyratron with a semiconductor switch, a number of devices must be connected in series [1,2] because of the limited withstand voltage of a conventional Si semiconductor device. The recently developed SiC-MOSFET is a promising candidate that can reduce the number of series connection because SiC inherently has a 10 times higher electrical breakdown strength compared with Si [3].…”

Section: Introductionmentioning

confidence: 99%

Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

Okamura

Naito

Takayama

et al. 2020

MSF

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To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. An 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse switching test were successfully demonstrated. Moreover, switching tests of 2nd generation MOSFET that has a twice larger device area was conducted. As a result, 60 % reduction of on-resistance was confirmed.

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“…These circuits have shown better performance than the conventional thyratron-based capacitor-to-capacitor charge transfer circuit. With the advent of high-power semiconductor devices it is now possible to replace the thyratron switch from the pulse generator circuit by using power semiconductor switches and magnetic pulse compression techniques [5,6].…”

Section: Introductionmentioning

confidence: 99%

Energy deposition studies in a copper vapour laser under different pulse excitation schemes

Nakhe

Rajanikanth

Bhatnagar

2003

Meas. Sci. Technol.

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A copper vapour laser is a gas discharge laser that requires fast, high-voltage, high-repetition-rate excitation pulses. In this paper, energy deposition studies in a typical copper vapour laser are reported under various pulse excitation schemes and under different operating conditions of the laser. The energy deposited in the laser tube is calculated by processing the measured voltage and current waveforms on the laser tube. This method has advantages over the calorimetric measurement method because it gives time-resolved energy deposition in the laser tube during the excitation pulse. Three different charge transfer circuits are used for pulse excitation: one is based on a thyratron switch, the second one on a magnetic pulse compressor switch and the third one on an insulated-gate bipolar transistor assisted by a magnetic pulse compressor. From studies of these circuits, it is found that the conventional thyratron-based capacitor-to-capacitor charge transfer circuit has the highest overall efficiency of energy deposition but it has the lowest energy deposition efficiency in the initial 100 ns of the pulse.

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Development of a semiconductor switch for high power copper vapor lasers

Cited by 13 publications

References 2 publications

FFT Analysis of a Series Loaded Resonant Converter-Based Power Supply for Pulsed Power Applications

FFT Analysis of a Series Loaded Resonant Converter-Based Power Supply for Pulsed Power Applications

Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

Energy deposition studies in a copper vapour laser under different pulse excitation schemes

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