Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells

Abstract

A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non‐doped a‐Si thin layer was inserted between the p(a‐Si)/n(c‐Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation.

Optical Energy Gap of Magnetically Confined Arc Discharge D.C. Sputtered Hydrogenated Amorphous Silicon

“…Once again, at P H = 8 x 10 " 4 mbar the variation in the deposition temperature of samples shows slightly change in E 0pt . as T s increases from 360 to 523 K. Since previous studies on the material have shown that the photoconductivity and aSi:H devices such as solar cells [14], Schottky diode [15], field effect transistor [16] can be degraded by hydrogen bonded configuration at 2100 cm "' (SiH 2 and/or SiH 3 ), it is of interest to analyze the infrared spectrum results depending on the density of localized states near Fermi -level, N(E F ). We have studied the influence of variation in P H and T s at an argon pressure of 1.1 xlO" 2 mbar on the density of states near Fermi-level.…”

Macroporous silicon as an absorber for thin heterojunction solar cells

“…We use a heterojunction solar cell processing sequence with amorphous silicon (a-Si) [23]. Therefore, we deposit an intrinsic a-Si/p + -type a-Si/indium tin oxide (ITO) layer stack on the front side and an intrinsic a Si/n + -type a-SiIITO layer stack on the rear side.…”

Crystalline Silicon Solar Cells

“…3.8 (Tanaka et al, 1993;Sawada et al, 1994;Maruyama et al, 2006). Here the problems raised by diffusions and their passivation are avoided totally by using deposited layers of hydrogenated amorphous silicon (a-Si:H) for both positive…”