Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system

Mauk, Michael G.; Shellenbarger, Z.A.; Sims, Patrick; Bloothoofd, W; McNeely, J. B.; Collins, S.R.; Rabinowitz, P.I; Hall, R.B.; DiNetta, L.C.; Barnett, Allen

doi:10.1016/s0022-0248(99)00805-2

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…The low throughput of conventional slideboat LPE systems is a disadvantage. However, large-scale, continuous-mode, high-throughput LPE systems, using large (>75 mm) diameter substrates, can be implemented, especially when only a single epitaxial layer is needed [28]. As discussed later, a high-performance TPV device can be realized by forming a p-n junction with zinc diffusion in single epitaxial layer.…”

Section: Liquid-phase Epitaxy (Lpe) Of Gasb-related Tpv Cellsmentioning

confidence: 99%

GaSb-related materials for TPV cells

Mauk¹,

Andreev

2003

Semicond. Sci. Technol.

129

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A survey of materials options and technologies for GaSb-related thermophotovoltaic (TPV) cells is presented, followed by an overview of device design principles and issues. This device technology has been developed for thermal-to-electric generator systems with thermal emitter infrared sources operated in the 1000-1200 • C range. Significant results for the growth, material characterization and device performance of TPV cells based on InGaAsSb, InGaSb, AlGaAsSb and InAsSbP fabricated by LPE, MOCVD, MBE and diffusion methods are reviewed. For single-junction TPV cells, epitaxial heterostructures with a ∼0.53 eV bandgap InGaAsSb base layer and wide-bandgap AlGaAsSb or GaSb window/cladding layers (all closely lattice matched to a GaSb substrate) represent the state of the art. As an alternative, a low-cost Zn-diffusion technology for fabrication of InGaAsSb p-n homojunction structures has been developed for producing the high efficiency TPV cells. External quantum yields as high as 90% at wavelengths (around 2000 nm wavelength), and response edges to about 2400 nm wavelength have been obtained with these TPV cells. Multijunction tandem TPV devices based on GaSb top cells and InGaAsSb bottom cells provide even higher performance. TPV cells based on InAsSbP, also reviewed here, have spectral responses in wavelengths in the 2.5-3.5 µm range, and thus provide a means for utilizing radiation from thermal emitters with lower temperatures.

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Section: Liquid-phase Epitaxy (Lpe) Of Gasb-related Tpv Cellsmentioning

confidence: 99%

GaSb-related materials for TPV cells

Mauk¹,

Andreev

2003

Semicond. Sci. Technol.

129

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“…By the 1980s, LPE has been serving as the most important technique for fabricating semiconductor films, , with the development of the electronic and optoelectronic industries as well as bubble memory device applications in the early stage . Over the past decades, the highly versatile technique has provided considerable new opportunities for equipment designs, ranging from simple top-dipping units used in small laboratories to sophisticated systems used for manufacturing-scale production of semiconductor films in the optoelectronics industry …”

Section: Introductionmentioning

confidence: 99%

“…5 Over the past decades, the highly versatile technique has provided considerable new opportunities for equipment designs, ranging from simple topdipping units used in small laboratories to sophisticated systems used for manufacturing-scale production of semiconductor films in the optoelectronics industry. 6 With the discovery of the high-temperature superconductor (HTS) YBa 2 Cu 3 O 7-δ (YBCO or Y123) in 1986, 7 LPE films have drawn surging interest due to their excellent performance. Proceeding at extremely low supersaturation, the Frank−van der Merwe mode could be obtained during the LPE process (i.e., layer by layer) with the exploitation of desirable substrates.…”

Section: Introductionmentioning

confidence: 99%

The Orientation Transition and Control of REBaCu₃O_y Films Grown by Liquid Phase Epitaxy

Huang

Yao

2021

Crystal Growth & Design

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Liquid phase epitaxy (LPE)-processed REBa2Cu3O7‑δ films, which possess single-crystalline properties, are of great significance to fundamental superconductor studies and practical applications. Performances of these films are related to their crystallographic orientations due to the notable anisotropy of coherent length along the a (and/or b) axis and c axis. Recently, an increasing number of experimental outcomes have proven that this preferential orientation is strongly dependent on the growth conditions. Based on those systematic results, the origin of crystallographic orientations is satisfactorily understood. Furthermore, attention has been directed toward tuning supersaturation for oriented film control, such as the pure a-axis oriented film (a-film), the pure c-axis oriented film (c-film), and some distinctive composite structures with superior performance for device applications. In order to provide universal guidance for artificial microstructure manipulation in LPE and significant insights for the development of film preparation, the mechanism of the a-/c-film formation related to thermodynamic and kinetic factors as well as the oriented growth control have been discussed in this review. Furthermore, the whole evolution model of oriented structures is also established, which may help researchers to better understand the films growth mechanism. Finally, the current challenges and future outlook on this flourishing topic have been suggested.

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Photovoltaics literature survey (No. 3)

Keevers

2000

Prog. Photovolt: Res. Appl.

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Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system

Cited by 6 publications

References 12 publications

GaSb-related materials for TPV cells

GaSb-related materials for TPV cells

The Orientation Transition and Control of REBaCu₃O_y Films Grown by Liquid Phase Epitaxy

Photovoltaics literature survey (No. 3)

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Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system

Cited by 6 publications

References 12 publications

GaSb-related materials for TPV cells

GaSb-related materials for TPV cells

The Orientation Transition and Control of REBaCu3Oy Films Grown by Liquid Phase Epitaxy

Photovoltaics literature survey (No. 3)

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Product

Resources

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The Orientation Transition and Control of REBaCu₃O_y Films Grown by Liquid Phase Epitaxy