Development of a modeling platform for 4.5 kV IGBT power modules

Sfakianakis, Georgios E.; Nawaz, Muhammad

doi:10.1109/iecon.2014.7048687

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…Insulated gate bipolar transistor (IGBT) is the most widely used full-control voltage-driven power semiconductor device [1]. The IGBT has been used in various types of electrical energy conversion devices, switching power supply, new energy generation, electric vehicles, etc.…”

Section: Introductionmentioning

confidence: 99%

Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis

Zhang

et al. 2020

Symmetry

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The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process. Modelling these symmetry characteristics of the IGBT life cycles enables the improvement of the remaining useful life (RUL) prediction performance. For this purpose, based on the key failure mechanism of IGBT in electric vehicles, a new method for estimating the RUL of an IGBT module is proposed based on the two-stress acceleration synthesis environment of junction temperature and vibration. The maximum likelihood estimation (MLE) was employed to estimate the logarithmic standard deviation and covariance matrix. The Shapiro–Wilk (S–W) test was performed to investigate the satisfaction degree of the RUL of the IGBT module to the lognormal distribution. The accelerated life test datasets of the IGBT module were analyzed using the Weibull++ software. The analysis results demonstrate that the IGBT lifetime is confirmed to lognormal distribution, and the accelerated model accords with the generalized Eyring acceleration model. The proposed method can estimate IGBT RUL in a short time, which provides a certain technical reference for the reliability analysis of the IGBT module.

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Section: Introductionmentioning

confidence: 99%

Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis

Zhang

et al. 2020

Symmetry

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Thermal Performance Improvement in Multi-Megawatt Power Converters Serving to Asynchronous Hydro Generators Operating Around Synchronous Speed

Desingu

Selvaraj

Kumar

et al. 2021

IEEE Trans. Energy Convers.

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Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Górecki

Zarębski

2021

Energies

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This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.

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Development of a modeling platform for 4.5 kV IGBT power modules

Cited by 3 publications

References 19 publications

Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis

Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis

Thermal Performance Improvement in Multi-Megawatt Power Converters Serving to Asynchronous Hydro Generators Operating Around Synchronous Speed

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

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