2008
DOI: 10.1016/j.cej.2007.03.027
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Development of a model for high precursor conversion efficiency pulsed-pressure chemical vapor deposition (PP-CVD) processing

Abstract: A model of the movement of precursor particles in the unsteady Pulsed-Pressure Chemical Vapour Deposition (PP-CVD) process is developed to study the high conversion efficiencies observed experimentally in this process. Verification of the modelling procedures was conducted through a study of velocity persistence in an equilibrium gas and through Direct Simulation Monte Carlo (DSMC) simulations of unsteady self-diffusion processes.The model results demonstrate that in the PP-CVD process the arrival time for pre… Show more

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Cited by 25 publications
(23 citation statements)
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“…PP-MOCVD is distinguished from other MOCVD approaches in that it does not use a steady flow of carrier gas to transport low volatility precursor to the substrate [21]. The expansion of the precursor and solvent vapour into the evacuated reactor volume results in a well-mixed reactor condition [22], which in turn can result in mass-transport limited growth and potentially high deposition efficiency, sufficient thickness, and reasonable processing time [23]. The well-mixed reactor condition means that a relatively simple modelling approach to the deposition kinetics can be considered [20].…”
Section: Pp-mocvd Process Design Considerationsmentioning
confidence: 99%
“…PP-MOCVD is distinguished from other MOCVD approaches in that it does not use a steady flow of carrier gas to transport low volatility precursor to the substrate [21]. The expansion of the precursor and solvent vapour into the evacuated reactor volume results in a well-mixed reactor condition [22], which in turn can result in mass-transport limited growth and potentially high deposition efficiency, sufficient thickness, and reasonable processing time [23]. The well-mixed reactor condition means that a relatively simple modelling approach to the deposition kinetics can be considered [20].…”
Section: Pp-mocvd Process Design Considerationsmentioning
confidence: 99%
“…At high temperatures (>500 • C) the reactor works in the mass-transport controlled regime with high precursor-arrival rate to the substrate surface during the peak of the pressure pulse [20]. The pulsed-pressure cycle is typically 6 seconds with less than 0.5 seconds of pressure rise, and 5 seconds of pump-down [21]. The pp-MOCVD process reduces the reactor and substrate geometry effects on the deposition, making it a versatile technique to coat 3D objects.…”
Section: Pulsed-pressure Mocvd Technologymentioning
confidence: 99%
“…Pulsed Pressure CVD (PP-CVD) is a novel CVD technique conceived by Versteeg et al [5] which has demonstrated improved film quality and substrate conformity over traditional CVD methods [6], as well as demonstrating high precursor conversion efficiency [7]. A heavy reactive molecule at low mole fraction in an inert carrier vapour is injected into an evacuated chamber ( Figure 1).…”
Section: Pulsed Pressure Chemical Vapour Deposition (Pp-cvd)mentioning
confidence: 99%