Development of a High-Current Ion Source for Non-Volatile Elements

Keller, R.; Nöhmayer, F.; Spädtke, P.

doi:10.1007/978-3-642-69156-0_10

Cited by 4 publications

(3 citation statements)

References 1 publication

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“…All the implants were performed on a 200kV Danfysik DF1090 ion implanter which uses a CHORDIS ion source that was run in cold gas mode, details of which can be found in [6]. Molecular implants at these energies give an equivalent B implant energy of ~5keV which has a projected range of 20nm in silicon.…”

Section: B Implantation and Measurementmentioning

confidence: 99%

Boron bromide as a source precursor for low energy applications

Gwilliam

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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Abstract-The use of boron tri-bromide as a source precursor for low energy boron implantation is studied in this work. Details of gas delivery system, beam purity and running performance have been investigated for a 75keV molecular implant to give an equivalent boron energy of 5keV. The behavior of the Br during thermal processing is compared to that of F derived from a BF 2 implant and is seen to be less mobile during post implant rapid thermal annealing with implications to gate oxide performance.

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Section: B Implantation and Measurementmentioning

confidence: 99%

Boron bromide as a source precursor for low energy applications

Gwilliam

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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“…1. CHORDIS ion sources comprise a family of models that utilize various particle-generation techniques such as internal or external ovens, sputtering, and gas mixtures [3]; they are used in particle accelerators, ion implanters, and stand-alone setups, for example, to create free metal clusters by ion-beam sputtering [4]. A useful table of vapor pressures of all elements as a function of temperature is given in Reference [5].…”

Section: Plasma Generators Equipped With Ovenmentioning

confidence: 99%

Primary ion sources for EBIS

Keller¹

2001

AIP Conference Proceedings

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This paper gives an introduction into the topic of primary ion sources that can be used to feed ions of normally solid elements into EBIS devices. Starting with a set of typical requirements for primary ion sources, some major types of ion generators are discussed first, with emphasis on their working principles rather than trying to give a fully representative listing of used and proposed generators. Beam-transport issues between primary ion source and EBIS are then examined, and generic characteristics of suitable beam-formation and transport systems are explained.

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“…Beam production started in a hot-cathode ion source (HORDIS) developed by Keller (1983) and slightly modified to take away the large amount of heat that was needed to maintain the discharge for helium ion production. The ions were accelerated with an accel/decel configuration and fed into the beam line that contained a deflection magnet.…”

Section: General Descriptionmentioning

confidence: 99%

Measurement of the population in a beam by means of laser-induced fluorescence

Dinklage¹,

Lokajczyk²,

Kunze³

1996

J. Phys. B: At. Mol. Opt. Phys.

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The population of the 2 3 S level in a 4 He beam (E Lab = (12.5-17.5) keV) has been measured by means of laser-induced fluorescence. For optical pumping the 2 3 S → 3 3 P o transition (λ = 389 nm) was chosen. The 2 3 S projectiles were produced by quasi-resonant charge transfer collisions of He + in lithium vapour. Densities between 0.5 × 10 6 cm −3 and 12 × 10 6 cm −3 were investigated. By comparison with the beam neutralization it could be shown that the fraction of 2 3 S particles in the beam can be manipulated by variation of the lithium density in the neutralization chamber. An explanation of this behaviour is proposed on the basis of collisionally-induced de-excitation of the 2 3 S state. An effective cross section of the de-excitation could be derived with a simple model of the de-excitation processes.

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Development of a High-Current Ion Source for Non-Volatile Elements

Cited by 4 publications

References 1 publication

Boron bromide as a source precursor for low energy applications

Boron bromide as a source precursor for low energy applications

Primary ion sources for EBIS

Measurement of the population in a beam by means of laser-induced fluorescence

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