Development of a fluorescence based flux sensor for thin film growth and nanoparticle deposition

Roo, Bert De; Vervaele, Mattias; Rajala, Markku; Miller, Toni; Guillon, Hervé; Seo, Jin Won; Locquet, Jean‐Pierre

doi:10.1063/1.4958823

Cited by 2 publications

(4 citation statements)

References 11 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The injection system of the Vapbox 1500 DLI vaporizer from Kemstream achieves a pulsed injection of a few Hz of a mixture of carrier gas and liquid. [40] The precursor tetraethyl orthosilicate (TEOS, !97.0%, Sigma-Aldrich) 0.175 mol L À1 in anhydrous cyclohexane was placed in a vessel. [18] Earlier tests were done with gold nanoparticles [18] and quantum dots.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

et al. 2017

Self Cite

View full text Add to dashboard Cite

In this work, the use of a newly developed direct liquid injection low pressure chemical vapor deposition (DLI-LPCVD) system is described, which allows for the deposition of thin films in a controlled and reproducible manner. The capabilities of this system are described via silica thin films deposited using the precursor tetraethyl orthosilicate (TEOS). The deposition of thin films is controlled by parameters, such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. The thickness of the deposited layer is varied simply by changing deposition temperature and time. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature and time. Auger electron spectroscopy, in addition, motivates our choice to use cyclohexane as a solvent. A growth rate of 12.2 Åmin À1 is obtained. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown by the newly developed DLI-LPCVD system. This system can be used for a wide range of films by varying the precursors.

show abstract

Section: Methodsmentioning

confidence: 99%

“…[18] Earlier tests were done with gold nanoparticles [18] and quantum dots. [40] The precursor tetraethyl orthosilicate (TEOS, !97.0%, Sigma-Aldrich) 0.175 mol L À1 in anhydrous cyclohexane was placed in a vessel. The flow rate was 0.6 g min À1 , the vaporizer temperature 100 C and anhydrous nitrogen was used as atomization and carrier gas.…”

Section: Methodsmentioning

confidence: 99%

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is able to inject and vaporize not only pure liquid CVD precursors and solutions of CVD precursors, but also nanoparticles suspensions. Earlier tests were done with gold nanoparticles and quantum dots suspensions.…”

Section: Methodsmentioning

confidence: 99%

“…The use of a solution instead of pure DADBS, as well as direct liquid injection (DLI) approach, however, is not described before, and could be advantageous as a better control of the DADBS vapor delivery to the process and a lower deposition rate can be achieved. Moreover, it gives the ability to change concentrations as extra parameter and makes embedding of nanoparticles possible, opening a lot of (new) opportunities . Interest arises from the wide range of functionalities that the films can possess such as optical, catalytic, electrical, and thermal functionalities; all largely determined by the composition, size, morphology, and surface properties of the NPs forming the film.…”

Section: Introductionmentioning

confidence: 99%

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

Vervaele

Roo

Debehets³

et al. 2017

Adv Eng Mater

Self Cite

View full text Add to dashboard Cite

In this work, an unusual silicon chemical vapor deposition precursor is used, which allows the safe deposition of thin silica films in a controlled and reproducible manner at a lower thermal budget with a newly developed direct liquid injection À low pressure chemical vapor deposition system. The deposition is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature, time, and oxygen flow. A growth rate of 4.5 Am in À1 is obtained without the addition of oxygen, which can be increased to 10.2 Åmin À1 by the addition of oxygen. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown. In addition, this newly developed system can be used for a wide range of films by varying the precursors or by co-injecting nanoparticles suspension mixed with the chemical vapor deposition precursor in the direct liquid injection vaporizer.

show abstract

Development of a fluorescence based flux sensor for thin film growth and nanoparticle deposition

Cited by 2 publications

References 11 publications

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

Contact Info

Product

Resources

About