Development of a fast atom beam gun for surface-activated bonding

Morisaki, Ryo; Hirai, Yukihiko; Oka, Chiemi; Mizoshiri, Mizue; Yamazaki, Takahiro; Sakùrai, Jun; Hirai, T.; Takahashi, T.; Tsuji, Hiroyuki; Hata, Seiichi

doi:10.1016/j.precisioneng.2019.11.006

Cited by 4 publications

(7 citation statements)

References 21 publications

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“…These results support the proposed physical mechanism to achieve high-performance with the FAB source developed in the previous study. 8) The calculated plasma potential for the proposed FAB source shows that a steep potential gradient is formed near the irradiation port by the application of a magnetic field.…”

Section: Resultsmentioning

confidence: 93%

“…Langmuir probe measurements [9][10][11][12] and irradiation experiments with oxide layer removal 8) were performed. The proposed FAB source was set in the vacuum chamber.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Therefore, we have proposed a novel FAB source as a countermeasure. 8) The lifetime of the proposed source is 5 times as long as that of the conventional source. In addition, the proposed source has 15 times the Ar-FAB irradiation efficiency of the conventional source.…”

Section: Introductionmentioning

confidence: 99%

“…It was reported that the accumulation of high-density Ar plasma near the irradiation port caused a reduction in Ar + sputtering and abrasion of the source, which improves the Ar-FAB irradiation efficiency. 8) However, details of the plasma characteristics in the proposed source have yet to be clarified. In this study, we analyzed Ar plasma in the proposed FAB source by particle-in-cell-Monte Carlo collision (PIC-MCC) simulation.…”

Section: Introductionmentioning

confidence: 99%

“…The simulation results were verified experimentally using a single Langmuir probe [9][10][11][12] and FAB irradiation experiments with oxide layer removal. 8)…”

Section: Introductionmentioning

confidence: 99%

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Particle-in-cell Monte Carlo collision simulation and experimental measurement of Ar plasma in a fast atom beam source for surface-activated bonding

Morisaki

Yamazaki

Oka

et al. 2021

Jpn. J. Appl. Phys.

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Ar plasma in a fast atom beam (FAB) source with magnetic fields, which was previously developed [Precis. Eng. 62, 106 (2020)] to achieve high-performance surface activated bonding, was analyzed by particle-in-cell-Monte Carlo collision simulation and experimental measurements. Simulation in the proposed FAB source with magnetic fields shows that higher electron density accumulation occurs near the irradiation port by E × B drift, and the potential gradient near the irradiation port steepens, which results in an increase in Ar+ flux to the irradiation port. The variation in the plasma distribution due to the effect of the magnetic field contributes to an increase in the amount of Ar-FAB irradiation, which reduces erosion of the carbon electrodes and suppresses the formation of carbon agglomerates. These simulation results were verified experimentally with Langmuir probe measurements and FAB irradiation experiments with oxide layer removal. The analysis results explain why high performance is achieved with the proposed FAB source.

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Section: Resultsmentioning

confidence: 93%

“…Langmuir probe measurements [9][10][11][12] and irradiation experiments with oxide layer removal 8) were performed. The proposed FAB source was set in the vacuum chamber.…”

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The simulation results were verified experimentally using a single Langmuir probe [9][10][11][12] and FAB irradiation experiments with oxide layer removal. 8)…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Particle-in-cell Monte Carlo collision simulation and experimental measurement of Ar plasma in a fast atom beam source for surface-activated bonding

Morisaki

Yamazaki

Oka

et al. 2021

Jpn. J. Appl. Phys.

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New Long Life Fast Atom Beam Source for Surface Activated Bonding

Morisaki

Sakùrai

Oka

et al. 2021

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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Soft Surface Activated Bonding of Hydrophobic Silicon Substrates

Lomonaco,

Abadie,

Hartmann

et al. 2023

ECS Trans.

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Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified, to better understand bonding mechanisms. Soft activation parameters on hydrophobic silicon substrates yield exceptionally thin bonding interfaces with acceptable bonding energy at room temperature. According to cross-sectional Transmission Electron Microscopy imaging, a 0.53 nm thick amorphous silicon interface was achieved with an adherence energy of 1337 ± 137 J/m² measured by the Double Cantilever Beam method.

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Development of a fast atom beam gun for surface-activated bonding

Cited by 4 publications

References 21 publications

Particle-in-cell Monte Carlo collision simulation and experimental measurement of Ar plasma in a fast atom beam source for surface-activated bonding

Particle-in-cell Monte Carlo collision simulation and experimental measurement of Ar plasma in a fast atom beam source for surface-activated bonding

New Long Life Fast Atom Beam Source for Surface Activated Bonding

Soft Surface Activated Bonding of Hydrophobic Silicon Substrates

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