2001
DOI: 10.1016/s0168-9002(00)01068-8
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Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

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Cited by 22 publications
(2 citation statements)
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“…Alternative bias techniques are based on punch-through or integrated transistors (the so-called FOXFET) [2]. Needless to say, double-sided detectors involve a higher complexity as compared to single-sided ones, since both sides of the wafers must be patterned and processed [44]. One evident need is double-side alignment of different layers, calling for special lithography equipment.…”
Section: Technological Aspectsmentioning
confidence: 99%
“…Alternative bias techniques are based on punch-through or integrated transistors (the so-called FOXFET) [2]. Needless to say, double-sided detectors involve a higher complexity as compared to single-sided ones, since both sides of the wafers must be patterned and processed [44]. One evident need is double-side alignment of different layers, calling for special lithography equipment.…”
Section: Technological Aspectsmentioning
confidence: 99%
“…A test-station for silicon microstrip detectors has been set up. The sensor utilized is a doublesided silicon strip detector [1] with dimensions of 2 × 2 cm 2 , a strip pitch of 50 ñm, punch-through biasing and AC coupled contact pads. The sensor is mounted on an L-shaped PCB displayed in figure 1.…”
Section: Detector Hardwarementioning
confidence: 99%