Development of a BGA package based on Si interposer with through silicon via

Hao, Zhibiao; Cai, Jian; Wang, Qian; Wang, Tao; Wang, Shuidi

doi:10.1016/s1007-0214(11)70059-1

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…As the grain size increases, there is a significant decrease in the volume fraction of grain boundaries or interfaces, which can improve the electromigration resistance and continuity of the seed layer. Equation (2) demonstrates that film continuity improves with the increase of adatom sticking coefficient by heating the substrate during or after deposition [19] .…”

Section: Effect Of Substrate Temperature On Film Coveragementioning

confidence: 99%

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Optimization and evaluation of sputtering barrier/seed layer in through silicon via for 3-D integration

Wei¹,

Cai²,

Wang³

et al. 2014

Tinshhua Sci. Technol.

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The barrier/seed layer is a key issue in Through Silicon Via (TSV) technology for 3-D integration.Sputtering is an important deposition method for via metallization in semiconductor process. However, due to the limitation of sputtering and a "scallop" profile inside vias, poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper, the effects of several sputter parameters (DC power, Ar pressure, deposition time, and substrate temperature) on thin film coverage for TSV applications are investigated.Robust TSVs with aspect ratio 5 1 were obtained with optimized magnetron sputter parameters. In addition, the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets.

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Section: Effect Of Substrate Temperature On Film Coveragementioning

confidence: 99%

“…As the core vertical interconnection, Through Silicon Via (TSV) has drawn lots of attention in 3-D integration. TSV offers numerous significant advantages, such as high density interconnection, high performance, low power consumption, and multifunctionality, to name a few [1,2] .…”

Section: Introductionmentioning

confidence: 99%

Optimization and evaluation of sputtering barrier/seed layer in through silicon via for 3-D integration

Wei¹,

Cai²,

Wang³

et al. 2014

Tinshhua Sci. Technol.

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“…As an important interconnect technology in 3-D packaging and System-in-Packaging (SiP) [6] , TSV of a fairly high apsect ratio requires the the barrier layer to be continuous, thick as well as of good step coverage, which hardly could be achieved by PVD or CVD. Atomic Layer Deposition (ALD) or Atomic Layer Epitaxy (ALE) is an excellent alternative for its high ability of step coverage, continuity, conformity, and a low deposition temperature [1,7] .…”

Section: Introductionmentioning

confidence: 99%

Properties and morphology of TiN films deposited by atomic layer deposition

Xie

Cai

Wang

et al. 2014

Tinshhua Sci. Technol.

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In this study, TiN films were deposited on SiO 2 substrates by Atomic Layer Deposition (ALD) using TiCl 4 and NH 3 as precursors. Properties and morphology of the TiN films were characterized by different methods.Using Grazing Incidence X-Ray Diffraction (GIXRD), TiN films demonstrated polycrystalline structure with (111) preferred orientation. Film thickness was measured by Spectroscopic Ellipsometry (SE) and a stable growth rate of 0.0178 nm/cycle was reached after 500 deposition cycles, which was consistent with the essence of ALD as a surface-saturated self-limiting reaction. Film resistivity measured by a four-point probe continuously decreased with increasing deposition cycles until it reached the minimum value of 300 cm at 5000 deposition cycles with a thickness of 87.04 nm. The surface roughness and morphology of the TiN films at different deposition cycles ranging from 50 to 400 were analyzed by Atomic Force Microscopy (AFM). The AFM results indicated that the initial film growth follows the Stranski-Krastanov mode.

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